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| TN3012L Vishay Siliconix N-Channel 300-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V 20 @ VGS = 4.5 V VGS(th) (V) 0.8 to 3 ID (A) 0.18 FEATURES D D D D D Low On-Resistance: 9 W Secondary Breakdown Free: 320 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) S 1 Device Marking Front View "S" TN 3012L xxyy "S" = Siliconix Logo xxyy = Date Code 3 Top View G 2 D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70206 S-04279--Rev. C, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 300 "20 0.18 0.14 0.5 0.8 0.32 156 -55 to 150 Unit V A W _C/W _C 11-1 TN3012L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V TA = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.18 A Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.14 A TA = 125_C Forward Transconductanceb Diode Forward Voltage gfs VSD VDS = 15 V, ID = 0.1 A IS = 0.18 A, VGS = 0 V 0.2 0.5 9 11 20 160 0.8 12 20 40 mS V W 300 0.8 320 2.1 3.0 "10 0.1 5 mA m A V nA Symbol Test Conditions Min Typa Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID ^100 mA 3300 38 1600 40 8 3 pF pC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = 50 V, RL = 500 W , ID ^100 mA VGEN = 10 V, RG = 25 W 5 20 25 30 10 40 ns 50 60 VNAS30 Turn-Off Time www.vishay.com 11-2 Document Number: 70206 S-04279--Rev. C, 16-Jul-01 TN3012L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 1.0 VGS = 10, 8 V 6V 0.8 I D - Drain Current (A) I D - Drain Current (A) 5V 0.6 0.8 125_C 0.6 TA = -55_C 1.0 25_C Transfer Characteristics 0.4 4V 0.2 3V 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 0.4 0.2 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 20 16 On-Resistance vs. Drain Current r DS(on) - On-Resistance ( W ) r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V 12 VGS = 10 V 12 ID = 0.5 A 8 ID = 0.1 A 8 4 4 0 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) 0 0 0.2 0.4 0.6 0.8 1.0 ID - Drain Current (A) On-Resistance vs. Junction Temperature 2.5 5 Threshold Voltage Variance Over Temperature r DS(on) - On-Resistance ( W ) (Normalized) V GS(th) - Threshold Voltage (V) 2.0 4 1.5 3 ID = 1 mA 2 1.0 0.5 1 0 -50 -25 0 25 50 75 100 125 150 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70206 S-04279--Rev. C, 16-Jul-01 TJ - Junction Temperature (_C) www.vishay.com 11-3 TN3012L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance 200 10 ID = 0.1 A V GS - Gate-to-Source Voltage (V) 160 C - Capacitance (pF) 8 Gate Charge 120 6 VDS = 150 V 4 80 Ciss 40 Coss Crss 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 2 0 0 500 1000 1500 2000 2500 3000 3500 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 0.2 TJ = 150_C 0.1 I S - Source Current (A) TJ = 25_C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 VSD - Source-to-Drain Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70206 S-04279--Rev. C, 16-Jul-01 |
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