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  Datasheet File OCR Text:
 Ordering number:ENN1059D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1259/2SC3145
60V/5A for High-Speed Drivers Applications
Features
* High fT. * High switching speed. * Wide ASO.
Package Dimensions
unit:mm 2010C
[2SA1259/2SC3145]
10.2 3.6 5.1 4.5 1.3
2.7 18.0 5.6
1.2 0.8
14.0
15.1
6.3
0.4
1
2
3
( ) : 2SA1259
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current Pulse Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB
2.7
Ratings (-)70 (-)60 (-)5 (-)5 (-)8 1.75
Unit V V V A A W W
Tc=25C
30 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=(-)40V, IE=0 VEB=(-)5V, IC=0 VCE=(-)2V, IC=(-)2.5A VCE=(-)5V, IC=(-)2.5A IC=(-)2.5A, IB=(-)5mA IC=(-)2.5A, IB=(-)5mA 2000 5000 200 (-1.0) 0.9 (-)1.5 (-)2.0 MHz V V Conditions Ratings min typ max (-)0.1 (-)3 Unit mA mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/63095TS/D251MH/3187KI/2075KI/D222KI 8-4641 No.1059-1/4
2SA1259/2SC3145
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Rise Time Storage Time Fall Time Symbol V(BR)CBO IC=(-)5mA, IE=0 V(BR)CEO IC=(-)50mA, RBE= ton See specified Test Circuit tstg tf See specified Test Circuit See specified Test Circuit Conditions Ratings min (-)70 (-)60 0.3 (1.3) 1.2 0.2 typ max Unit V V s s s
Specified Test Circuit (for PNP, the polarity is reversed)
PW=50s, Duty Cycle1% 500IB1=--500IB2=IC=20A TUT INPUT RB RL 10 VR 50 + 100F VBE=--5V + 470F VCC=20V OUTPUT
Electrical Connection
C
B
6k 200 2SA1259
E C
B
6k 200 2SC3145
E
7
IC -- VCE
2SA1259 From top --1000A --900A --800A --700A --600A --500A
--400A
7
IC -- VCE
From top 1mA 500A 450A 400A 350A 300A 250A 200A 2SC3145
6
6
Collector Current, IC - A
Collector Current, IC - A
5
5
4
4
3
3
2
--300A
2
1
--200A
1
0 0
IB=0
1 2 3 4 5 ITR03157
IB=0
0 0 1 2 3 4 5 ITR03158
Collector-to-Emitter Voltage, VCE - V
--6 --5 Collector Current, IC - A --4 --3 --2 --1
0
Collector-to-Emitter Voltage, VCE - V
6
IC -- VBE
2SA1259 Tc=25C VCE=--2V Collector Current, IC - A
IC -- VBE
2SC3145 Tc=25C VCE=2V
5
4
3
2
1
--0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2 --2.4 Base-to-Emitter Voltage, VBE - V ITR03159
0 0.4
0.8
1.2
1.6
2.0
2.4 ITR03160
Base-to-Emitter Voltage, VBE - V
No.1059-2/4
2SA1259/2SC3145
2
hFE -- IC
2SA1259 Tc=25C VCE=--2V
2 10000 7
hFE -- IC
2SC3145 Tc=25C VCE=2V
10000 7
DC Current Gain, hFE
5 3 2
DC Current Gain, hFE
2 3 5 7 --0.1
5 3 2
1000 7 5 3 2 100
1000 7 5 3 2
--1.0 2 Collector Current, IC - A
2 3
5
7
3
5
7
--10
10 7
5
7 0.1
2
3
5
7
1.0
2
3
5
ITR03161
Collector Current, IC - A
7 10 ITR03162
--10
7
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE (sat) - V
2SA1259 Tc=25C IC / IB=500
VCE(sat) -- IC
2SC3145 Tc=25C IC / IB=500
Collector-to-Emitter Saturation Voltage, VCE (sat) - V
5
5
3 2
3
2
--1.0
7 5
1.0 7 5 0.1 2 3 5 7 2 3 5 7 10 ITR03164
--0.1
2
3
5 7 --1.0 2 3 Collector Current, IC - A
5
7
--10
1.0
ITR03163 10 7
Collector Current, IC - A
--10
7
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE (sat) - V
2SA1259 Tc=25C IC / IB=500
VBE(sat) -- IC
2SC3145 Tc=25C IC / IB=500
Base-to-Emitter Saturation Voltage, VBE (sat) - V
5
5
3
3
2
2
--1.0
7 5
1.0 7 5 0.1
--0.1
10 5
2
3
5 7 --1.0 2 3 Collector Current, IC - A
5
7
--10
2
3
5
7
ITR03165 10 5
Collector Current, IC - A
1.0
2
3
5
7 10 ITR03166
ASO
ICP
ASO
2SA1259 Tc=25C
ICP=8A IC=5A
2SC3145 Tc=25C
Collector Current, IC - A
2 1.0 5 3 2 0.1 5 3 2
Collector Current, IC - A
3
IC
3 2 1.0 7 5 3 2 0.1 7 5
10 m s
era tio n
1ms to 100ms : single pulse
2 3 5 7 10 2 3 5
Collector-to-Emitter Voltage, VCE - V
DC op
s m 10
1m s
10 0m s
100 ITR03167 7
1m s
3
1ms to 100ms : single pulse
3 5 7 10 2 3 56
Collector-to-Emitter Voltage, VCE - V
DC
s 0m 10 on ati er op
7 100 ITR03168
No.1059-3/4
2SA1259/2SC3145
2.0
PC -- Ta
2SA1259 / 2SC3145
40
PC -- Tc
2SA1259 / 2SC3145
1.75
Collector Dissipation, PC - W
1.6
Collector Dissipation, PC - W
30
1.2
No
he
at
sin
k
20
0.8
10
0.4
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
ITR03169
Case Temperature, Tc - C
ITR03170
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice.
PS No.1059-4/4


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