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| 2SK2272-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 2,8 5A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=2,5A VGS=10V ID=2,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=5A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 900 2,5 Typ. 3,0 10 0,2 10 2,0 6,0 1200 120 40 25 25 85 45 0,93 400 1,5 Max. 3,5 500 1,0 100 2,8 1800 180 60 40 40 130 70 1,40 3,0 5,0 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 30,0 1,56 Unit C/W C/W N-channel MOS-FET 900V 2,8 2SK2272-01R FAP-IIA Series Drain-Source On-State Resistance RDS(on) = f(Tch); ID=5A; VGS=10V 5A 80W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristics VGS=f(Qg); ID=5A Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test C [nF] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Power Dissipation PD=f(Tc) Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T PD[W] 10 ID [A] 12 Tch [C] VDS [V] t [s] Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com |
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