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| Silicon Rectifier Diodes Use Advantages 1N645 to 649 or 1N645-1 to 649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. May be used in hostile environments where hermeticity and reliability are important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals. Available up to JANTXV-1 level. "S" level screening capability to Source Control Drawings. Features D O -3 5 G la ss P a ck a g e Six Sigma quality Lead Dia. 0.018-0.022" Humidity proof glass 0.458-0.558 mm Metallurgically bonded Thermally matched system D ia . 1 .0 " L e n g th No thermal fatigue 2 5 .4 m m mm (M in .) 1.53-2.28 mm High surge capability Sigma BondTM plated contacts 100% guaranteed solderability (DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available 0.12 0-.200 " 3.05 -5 .080.06 -0 .09" Absolute Maximum Ratings Power Dissipation at 3/8" from the body, TL= 75 oC Average Forward Rectified Current at TL Thermal Impedance Detail Specifications Reverse Voltage (V R) Breakdown Voltage (MIN.) @ 100A (BV) Symbol Ptot IAV TO&S ZqJX Value 600 400 -65 to 175 35 o Unit mWatts mAmps o = 75 C o Operating and Storage Temperature Range C C/W Maximum Forward Maximum Average Rectified Current Voltage Reverse Leakage Current _______________ Drop _______________ (IO ) (IO ) (VF) @ IF = 400mA (IR) @ VR 25 C 150 C (MIN.) (MAX.) 25 C 100 C Maximum Typical Surge Junction Current Capacitance (I FSM) @ -12V (NOTE 1) (C O ) Type Volts Volts Amps Amps 0.15 0.15 0.15 0.15 0.15 Second Volts 1.0 1.0 1.0 1.0 1.0 A 0.2 0.2 0.2 0.2 0.2 A 15 15 20 20 25 Amps 3 3 3 3 3 pF 9 9 9 9 9 1N645,-1 225 275 1N646,-1 300 360 1N647,-1 400 480 1N648,-1 500 600 1N649,-1 600 720 Note 1: Surge Current @TA = +25 C to 0.4 0.4 0.4 0.4 0.4 +150 C, for 1 For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial. 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Silicon Rectifier Diodes 1N645-1 thru 1N649-1 DO-35 Glass Package DO-35 DERATING (175 C Tj) D O - 35 PO W ER D ER AT IN G C U R V E 500 400 P ower Dissipated (MilliWatts) 300 200 100 0 0 20 40 60 80 100 120 140 160 180 T e m p e ra tu re ( 3/8" fro m b od y) C 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Silicon Rectifier Diodes 1N645-1 thru 1N649-1 DO-35 Glass Package Silicon Rectifier Diodes 1N645-1 thru 1N649-1 1 N 6 4 5 - 6 4 9 R ec tifie r D io d e s Typ ic al Ir V r = P IV ; Ta = +1 50 C 1N 6 49 -1 6 .9 6 .7 6 .5 6 .3 Ir (Typic al V alues ) mic roA mps 6 .1 5 .9 5 .7 5 .5 5 .3 5 .1 4 .9 4 .7 4 .5 2 00 3 00 4 00 V r - V o lts 5 00 6 00 1N 6 45 -1 1 N 6 46 1N 6 47 -1 1 N 6 48 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 |
Price & Availability of JAN1N645-1NBSP
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