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C3372 K1536CT AD8804 DSPIC3 FST3135 4001B 448640 TA0706A
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  Datasheet File OCR Text:
 SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KTA733
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) Low Noise : NF=1dB(Typ.). at f=1kHz Complementary to KTC945.
K D E G N
A
Excellent hFE Linearity.
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -60 -50 -5 -150 625 150 -55 150 UNIT V
L
F
H
F
1
2
3
V V mA mW
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification R:90 180, Q:135
)
TEST CONDITION IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA Rg=10k , f=1kHz P:200 400, K:300 600 MIN. -60 -50 -5 90 TYP. -0.1 300 4 1.0 MAX. -0.1 -0.1 600 -0.3 -1.1 7 10 V V MHz pF dB UNIT V V V A A
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) fT Cob NF 270,
2001. 9. 14
Revision No : 2
1/2
KTA733
I C - VCE
-240 COLLECTOR CURRENT I C (mA) -200 -160 -120
-0.5 -2.0 COMMON EMITTER Ta=25 C -1.5 -1.0
hFE - I C
3k DC CURRENT GAIN h FE
COMMON EMITTER VCE =-6V
1k 500 300
Ta=100 C Ta=25 C
-80 -40 0
I B =-0.2mA
100 50
Ta=-25 C
0 0 -1 -2 -3 -4 -5 -6 -7
30 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) TRANSITION FREQUENCY f T (MHz) -1k -500 -300 3k
COMMON EMITTER I C /I B =10
fT - IC
COMMON EMITTER VCE =-10V Ta=25 C
1k 500 300
-100 -50 -30
Ta =1 00 C
Ta=25 C Ta=-25 C
100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300
-10 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
I B - VBE
COMMON EMITTER VCE =-6V
Pc - Ta
COLLECTOR POWER DISSIPATION P C (mW) -0.8 -1.0 -1.2 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C)
-1k BASE CURRENT I B (A) -300 -100 -30 -10 -3 -1 -0.3 0
-0.2
-0.4
-0.6
BASE-EMITTER VOLTAGE VBE (V)
2001. 9. 14
Revision No : 2
Ta=2 5C Ta=25 C
Ta=1 00 C
2/2


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