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| MITSUBISHI SEMICONDUCTOR MGFK39V4045 14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally impedance matched High output power P1dB=8W (TYP.) @f=14.0~14.5GHz High linear power gain GLP=5.5dB (TYP.) @f=14.0~14.5GHz High power added efficiency add =20%(TYP.) @f=14.0~14.5GHz, P1dB APPLICATION For use in 14.0~14.5GHz band amplifiers QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.4A Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 Ratings -15 -15 6.0 -18 36 42.8 175 -65 ~ +175 Unit V V A mA mA W C C Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol IDSS gm VGS (off) P1dB GLP add Rth (ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency Thermal resistance *1 Vf method VDS=10V, ID=2.4A, f=14.0~14.5GHz Test conditions VDS=3V, VDS=0V VDS=3V, ID=2.4A VDS=3V, ID=20mA Limits Min. -- 1.2 -2 38.5 4.5 -- -- Typ. 4.0 2.0 -- 39.0 5.5 20 -- Max 6.0 -- -5 -- -- -- 3.5 Unit A S V dBm dB % C/W *1 : Channel to case MITSUBISHI ELECTRIC |
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