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| Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Channel P-Channel P Channel 20 -20 20 FEATURES rDS(on) (W) 0.0145 @ VGS = 10 V 0.017 @ VGS = 4.5 V 0.033 @ VGS = -4.5 V 0.050 @ VGS = -2.5 V ID (A) 9.6 8.6 -6.2 -5 D TrenchFETr Power MOSFET APPLICATIONS D Level Shift D Load Switch D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4511DY SI4511DY-T1 (with Tape and Reel) Si4511DY--E3 (Lead (Pb)-Free) SI4511DY-T1--E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 S1 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C P-Channel 10 sec. Steady State -20 "12 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 sec. Steady State 20 "16 Unit V 9.6 7.7 40 1.7 2 1.3 7.2 5.8 0.9 1.1 0.7 -6.2 -4.9 -40 -1.7 2 1.3 -55 to 150 -4.6 -3.7 0.9 1.1 0.7 W _C A THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 72223 S-41496--Rev. B, 09-Aug-04 www.vishay.com t v 10 sec Steady-State Steady-State P- Channel Typ 50 90 30 Symbol RthJA RthJF Typ 50 85 30 Max 62.5 110 40 Max 62.5 110 35 Unit _C/W C/W 1 Si4511DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS( h) GS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "16 V VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = -16 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -4.5 V VGS = 10 V, ID = 9.6 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = -4.5 V, ID = -6.2 A VGS = 4.5 V, ID = 8.6 A VGS = -2.5 V, ID = -5 A Forward Transconductanceb gf fs VSD VDS = 15 V, ID = 9.6 A VDS = -15 V, ID = -6.2 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 -40 0.0115 0.022 0.0135 0.035 33 17 0.8 -0.8 1.2 -1.2 0.0145 0.033 0.017 0.050 S W 0.6 -0.6 1.8 1.4 "100 "100 1 -1 5 -5 A mA V Symbol Test Condition Min Typa Max Unit Gate-Body Gate Body Leakage nA Diode Forward Voltageb V Dynamica Total Gate Charge Qg Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr IF = 1.7 A, di/dt = 100 A/ms IF = -1.7 A, di/dt = 100 A/ms N-Channel N Ch l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Channel VDD = -10 V, RL = 10 W 10 V ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.6 A P-Channel VDS = -10 V, VGS = -4.5 V ID = -6.2 A 10 V 4 5 V, 62 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11.5 17 3.7 4.1 3.3 4.3 12 25 12 30 55 70 15 50 50 40 20 40 20 45 85 105 25 75 100 80 ns 18 20 nC Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 72223 S-41496--Rev. B, 09-Aug-04 Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 3V 32 40 N-CHANNEL Transfer Characteristics 24 24 16 16 TC = 125_C 8 25_C -55_C 8 2V 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 2000 Capacitance r DS(on)- On-Resistance ( W ) VGS = 10 V 0.010 C - Capacitance (pF) 0.015 1600 VGS = 4.5 V Ciss 1200 800 Crss Coss 0.005 400 0.000 0 8 16 24 32 40 ID - Drain Current (A) 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 10 Gate Charge 1.6 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 8 6 rDS(on) - On-Resiistance (Normalized) VDS = 10 V ID = 9.6 A 1.4 VGS = 10 V ID = 9.6 A 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 18 21 24 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72223 S-41496--Rev. B, 09-Aug-04 www.vishay.com 3 Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.05 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.04 ID = 9.6 A 0.03 ID = 3 A 0.02 I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 0.01 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) -0.0 Power (W) -0.2 -0.4 -0.6 -0.8 -50 ID = 250 mA 30 25 20 Single Pulse Power 15 10 5 0 10-2 -25 0 25 50 75 100 125 150 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc www.vishay.com 4 Document Number: 72223 S-41496--Rev. B, 09-Aug-04 Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3.5 V 32 I D - Drain Current (A) I D - Drain Current (A) 3V 32 40 P-CHANNEL Transfer Characteristics TC = -55_C 25_C 24 2.5 V 24 125_C 16 2V 8 1.5 V 0 0.0 0.4 0.8 1.2 1.6 2.0 16 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) Document Number: 72223 S-41496--Rev. B, 09-Aug-04 VGS - Gate-to-Source Voltage (V) www.vishay.com 5 Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 Crss 0.00 0 8 16 24 32 40 0 0 4 8 12 16 20 P-CHANNEL Capacitance 0.08 Ciss 0.06 VGS = 4.5 V 0.04 VGS = 2.5 V 0.02 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.2 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.2 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 6 9 12 15 18 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) 0.06 ID = 6.2 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 6 Document Number: 72223 S-41496--Rev. B, 09-Aug-04 Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.6 P-CHANNEL Single Pulse Power 30 25 20 Threshold Voltage 0.4 VGS(th) Variance (V) ID = 250 mA Power (W) 0.2 15 10 0.0 -0.2 5 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Document Number: 72223 S-41496--Rev. B, 09-Aug-04 www.vishay.com 7 Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 P-CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72223 S-41496--Rev. B, 09-Aug-04 |
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