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| VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number VP0300L VP0300LS VQ2001J VQ2001P -30 30 V(BR)DSS Min (V) rDS(on) Max (W) 2.5 @ VGS = -12 V 2.5 @ VGS = -12 V 2 @ VGS = -12 V 2 @ VGS = -12 V VGS(th) (V) -2 to -4.5 -2 to -4.5 -2 to -4.5 -2 to -4.5 ID (A) -0.32 -0.5 -0.6 -0.6 FEATURES D D D D D High-Side Switching Low On-Resistance: 1.5 W Moderate Threshold: -3.1 V Fast Switching Speed: 17 ns Low Input Capacitance: 60 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control Dual-In-Line TO-226AA (TO-92) 1 TO-92S D1 1 2 3 4 5 6 7 14 D4 13 S4 12 G4 11 NC 10 G3 9 8 Top View Plastic: VQ2001J Sidebraze: VQ2001P S3 D3 P P P S1 G1 S S 1 G 2 G 2 NC G2 D 3 D 3 P S2 D2 Top View VP0300L Top View VP0300LS ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) VQ2001J/P Parameter P Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol S bl VDS VGS ID IDM PD RthJA TJ, Tstg VP0300L -30 "20 -0.32 -0.2 -2.4 0.8 0.32 156 VP0300LS -30 "20 -0.5 -0.32 -3 0.9 0.4 139 -55 to 150 Single -30 "20 -0.6 -0.37 -2 1.3 0.52 96 Total Quad -30 "20 -0.6 -0.37 -2 2 Unit Ui V A W 0.8 62.5 _C/W _C Notes a. Pulse width limited by maximum junction temperature. Applications information may also be obtained via FaxBack, request document #70611. Document Number: 70217 S-00591--Rev. D, 04-Apr-00 www.vishay.com S FaxBack 408-970-5600 11-1 VP0300L/LS, VQ2001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP0300L/LS VQ2001J/P Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "16 V -55 -3.1 -30 -2 -4.5 -30 V -2 -4.5 "100 "500 "100 -10 -500 -500 -10 mA A nA A Gate-Body Leakage G BdL k IGSS TJ = 125_C VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS TJ = 125_C VDS = -30 V, VGS = 0 V On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb ID(on) rDS(on) gfs gos VDS = -10 V, VGS = -12 V VGS = -12 V, ID = -1 A TJ = 125_C VDS = -10 V, ID = -0.5 A VDS = -7.5 V, ID = -0.05 A -2.8 1.5 2.6 370 0.25 -1.5 2.5 3.6 -1.5 2 3.6 A W 200 200 mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -15 V, VGS = 0 V 15 V f = 1 MHz 60 40 10 150 100 60 150 100 60 pF F Switchingc Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = -25 V, RL = 23 W ID ^ -1 A VGEN = -10 V A, RG = 25 W VDD =-15 V, RL = 23 W ID ^ -0.6 A, VGEN = -10 V RG = 25 W 19 17 19 16 30 30 ns 30 30 VPEA03 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 11-2 Document Number: 70217 S-00591--Rev. D, 04-Apr-00 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics -2.0 VGS = -10 V -1.6 I D - Drain Current (A) -9 V -1000 125_C -8 V I D - Drain Current (mA) -800 TJ = -55_C 25_C Transfer Characteristics -1.2 -7 V -600 -0.8 -6 V -400 -0.4 -5 V -4 V -200 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) 0 0 -2 -4 -6 -8 -10 VGS - Gate-to-Source Voltage (V) Capacitance 175 150 C - Capacitance (pF) 125 100 75 50 25 0 0 -5 -10 -15 -20 -25 -30 VDS - Drain-to-Source Voltage (V) Crss Coss VGS = 0 V f = 1 MHz -18 Gate Charge V GS - Gate-to-Source Voltage (V) -15 VDS = -15 V ID = -1 A VDS = -24 V ID = -1 A -12 -9 Ciss -6 -3 0 0 1000 2000 3000 4000 5000 Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.65 -10 K Source-Drain Diode Forward Voltage TJ = 150_C I S -Source Current (A) -1 K TJ = 25_C 1.50 r DS(on)- On-Resistance ( W ) (Normalized) VGS = -4.5 V ID = -0.5 A 1.35 1.20 VGS = -10 V ID = -0.1 A -100 1.05 -10 0.90 0.75 -50 -1 -25 0 25 50 75 100 125 150 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) www.vishay.com S FaxBack 408-970-5600 Document Number: 70217 S-00591--Rev. D, 04-Apr-00 11-3 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 3.0 ID = -0.5 A r DS(on)- On-Resistance ( W ) 2.5 I D - Drain Current ( m A) -1 K -10 K Threshold Region VDS = -10 V TJ = 150_C 2.0 100_C -100 25_C 1.5 ID = -0.2 A -10 -55_C 1.0 0 0 -4 -8 -12 -16 -20 VGS - Gate-to-Source Voltage (V) -1 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 VGS - Gate-Source Voltage (V) THERMAL RATINGS Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 t1 - Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K www.vishay.com S FaxBack 408-970-5600 11-4 Document Number: 70217 S-00591--Rev. D, 04-Apr-00 |
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