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| 2SK2586 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * Low on-resistance RDS(on) = 7 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 3 D 2 3 1. Gate 2. Drain (Flange) 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID** ID(pulse)* IDR** IAP*** EAR*** Pch** Tch Tstg Ratings 60 20 60 240 60 45 174 125 150 -55 to +150 Unit V V A A A A mJ W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25C *** Value at Tch = 25C, Rg 50 2SK2586 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 7 10 100 2.0 10 A A V m -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 30 A VGS = 10 V * ID = 30 A VGS = 4 V * ID = 30 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 30 A VGS = 10 V RL = 1.0 ------------------------------------------------ -- 10 16 m -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) 35 60 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test s See characteristic curves of 2SK2529. -- -- -- -- -- -- -- -- 3550 1760 500 35 260 480 370 0.94 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- VDF trr tf td(off) tr -------------------------------------------------------------------------------------- -- 140 -- ns -------------------------------------------------------------------------------------- 2SK2586 Power vs. Temperature Derating 200 Pch (W) I D (A) 500 200 100 50 Maximum Safe Operation Area 10 PW C D O pe 10 0 s s 150 1 = 10 n m s Channel Dissipation Drain Current 100 20 10 5 2 1 m s Operation in this area is limited by R DS(on) (1 tio ra sh ot ) c (T = 25 50 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25 C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) C ) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.0 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2586 Package Dimensions Unit : mm 5.0 0.3 3.2 0.2 0.5 typ 16.0 max 1.0 typ 5.0 max 1.5 typ * TO-3P 14.9 0.2 2.0 typ 20.1 max 1.6 typ 1.4 max 2.0 typ 18.0 0.5 2.8 typ 1.0 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 0.2 0.3 typ 5.45 0.2 5.45 0.2 Hitachi Code EIAJ JEDEC TO-3P SC-65 -- |
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