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Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
0.70.1
s Features
q q q
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1
4.20.2
s Absolute Maximum Ratings
Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol
(TC=25C)
Ratings 150 200 250
2.540.25
16.70.3
High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw
7.50.2
Unit
14.00.5
Solder Dip
4.0
1.30.2
0.5 +0.2 -0.1 0.80.1
V
Collector to emitter voltage
150 200 250 80 6 5 40 2 150 -55 to +150 V V A W C C V
5.080.5 1 2 3
Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B
(TC=25C)
Symbol Conditions VCB = 150V, IE = 0 ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.8A, VEB = -5V
X L 25mH Y 1 15V G 80 IC(A) 0.2 0.1 VCE(V)
min
typ
max 1 1 1
Unit
mA
Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Fall time
*V CEO(sus)
80 6 14 1.5 1.6 40 1
V V
V V MHz s
Test circuit
60Hz
120 6V
1
Power Transistors
PC -- Ta
50 6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W)
2SD1274, 2SD1274A, 2SD1274B
IC -- VCE
8 TC=25C 5 IB=45mA 7 25C VCE=4V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
40
(1)
40mA 35mA 4 30mA 25mA 3 20mA 2 15mA 10mA 1 5mA 0
6 5 4 3 2 1 0 TC=100C -25C
30
20
10
(2) (3) (4)
0 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 TC=100C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C 10000
hFE -- IC
10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
VCE=10V f=10MHz TC=25C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000
Area of safe operation (ASO)
100 IE=0 f=1MHz TC=25C 30 Non repetitive pulse TC=25C
Area of safe operation, horizontal operation ASO
20 18 f=15.75kHz, TC=25C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 1 3 10 30 100
Collector current IC (A)
10 ICP 3 1 0.3 0.1 0.03 0.01 IC DC t=1ms
Collector current IC (A)
16 14 12 10 8 6 4 2
<1mA 0 1 3 10 30 100 300 1000 0 80 160 240 320 300 1000
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103
2SD1274, 2SD1274A, 2SD1274B
(1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
102
(1)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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