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| Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS Features * * Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product * 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation Derate above 25 C 5.0 28.6 Watts mW/ C Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, IB = 0) Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) 55 30 55 3.5 Value Typ. Max. 20 100 Unit Vdc Vdc Vdc Vdc A A (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 672-3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 672-3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) 5.0 10 25 200 200 - VCE(sat) - - 1.0 Vdc DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 2N3866 2N3866A 500 800 Value Typ. 800 2.8 Max. 3.5 Unit MHz COB pF Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS FUNCTIONAL Symbol GPE Power Gain Test Conditions Min. Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C 10 Value Typ. Max. Unit dB Pout Output Power 1.0 - - Watts Collector Efficiency C 45 - - % 8-60 LS POUT (RL=50 OHMS) PIN (R S=50 OHMS) L1 8-60 RFC RFC 0.9-7 3-35 12 RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS. L1: 2 TURNS No. 18 wire, 1/4 ID, 1/8" long " Capacitor values in pF unless otherwise indicated. . Ls: 2 3/4 TURNS No. 18 wire, 1/4 ID, 3/16" long " Tuning capacitors are air variable Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) 12 11.4 15 17 13 5.5 11 5 5 10 10 10 10 5 10 10 15 6 6 5 10 15 11 14 10 8 10 11 12.5 15.5 14 15 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 17 SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 POWER MACRO POWER MACRO MA C R O X MA C R O X SO-8 POWER MACRO POWER MACRO 672-4427, R2 672-4427 672-553 672-553T 672-607 672-6255 672-5179 672-559 672-559 672-3866A 672-555 672-555T 672-559 672-559 672-8372,R1,R2 672-557 672-557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 512 NPN 512 NPN 400 NPN 470 NPN 470 NPN 870 NPN 870 NPN 870 NPN 870 NPN 870 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 672-5109 672-5943C 672-5943, R1, R2 672-5179 672-2857 672-517 672-904 672-6304 672-R91 672-R96 672-5812, R1, R2 672-581A 672-90 672-90 672-914 672-581 672-586 672-951 672-571 672-91 672-90 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 1000 1000 1000 1000 2 2 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 5000 5000 18 1000 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 MACRO X MACRO X MACRO T MACRO T 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 6 7 2 - 3 8 6 6 , R 1 , R 2 NPN 400 2.2 0.45 1 1 1 TO-39 TO-39 672-545 672-544 PNP NPN 14 13.5 1400 1500 RF (Low Power PA / General Purpose) Selection RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 2 3 4 2 2 3 1 8 1 5 4 Macro T Macro X Power SO-8 Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 17 10 10 12 15 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 100 70 35 30 Freq (MHz) NF (dB) NF IC (mA) NF VCE GNF (dB) Device Ftau (MHz) GPE (dB) GPE VCC Package BVCEO Packag Device Type Type Pout 2 70 400 70 400 Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS |
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