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| BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C Value -60 -80 -100 -120 -60 -80 -100 -120 -5.0 Unit V VCBO Collector-Base Voltage V VEBO Emitter-Base Voltage V IC(RMS) IC Collector Current -16 A -20 ICM IB Base Current -0.25 A PT Power Dissipation @ TC = 25 150 Watts W/C TJ TS Junction Temperature Storage Temperature -55 to +200 C COMSET SEMICONDUCTORS 1/4 BDX 66, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX66 BDX66A BDX66B BDX66C Value 1.17 Unit C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX66 -60 - - BDX66A -80 - V VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=-0.1 A, L=25mH BDX66B -100 - - BDX66C -120 - - VCE=-30 V BDX66 - - VCE=-40 V BDX66A - -3 mA ICEO Collector Cutoff Current VCE=-50 V BDX66B - - VCE=-60 V BDX66C - - COMSET SEMICONDUCTORS 2/4 BDX 66, A, B, C Symbol Ratings Emitter Cutoff Current Test Condition(s) BDX66 BDX66A BDX66B BDX66C Min Typ Mx Unit IEBO VBE=-5 V - - -5.0 mA TCASE=25C, VCB=-40 V BDX66 - -1 TCASE=150C - - -5 TCASE=25C, VCB=-50 V BDX66A - -1 TCASE=150C - - -5 mA ICBO Collector-Base Cutoff Current TCASE=25C, VCB=-60 V BDX66B - -1 TCASE=150C - - -5 TCASE=25C, VCB=-70 V BDX66C - -1 TCASE=150C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C - -5 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-10 A, IB=-40 mA - - -2 V C22b ton Switching characteristics IE=0 A, VCB=-10V, f=1 MHz - 300 - pF - 1 3.5 s - VCC=12V, IC=-10 A, IB1=IB2=0.04 toff - COMSET SEMICONDUCTORS 3/4 BDX 66, A, B, C Symbol Ratings Test Condition(s) BDX66 BDX66A BDX66B BDX66C Min Typ Mx Unit fC VCE=-3 V, IC=-5 A, f=1 MHz - 60 - kHz (*) Pulse Width 300 s, Duty Cycle 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 4/4 |
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