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| FDD6690A February 1999 PRELIMINARY FDD6690A N-Channel, Logic Level, PowerTrenchTM MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features * * * 46 A, 30 V. RDS(ON) = 0.012 @ VGS = 10 V RDS(ON) = 0.016 @ VGS = 4.5 V. Low gate charge (17nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications * * DC/DC converter Motor drives * D D G S TO-252 S TA=25 C unless otherwise noted o G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current PD - Continuous - Pulsed Parameter Ratings 30 (Note 1) (Note 1a) Units V V A 20 46 12 100 50 2.8 1.3 -55 to +150 Maximum Power Dissipation @ TC = 25oC TA = 25oC T A = 25oC (Note 1) (Note 1a) (Note 1b) W TJ, Tstg Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 2.5 96 C/W C/W Package Marking and Ordering Information Device Marking FDD6690A (c)1999 Fairchild Semiconductor Corporation Device FDD6690A Reel Size 13'' Tape width 16mm Quantity 2500 FDD6690A, Rev. B2 FDD6690A Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions (Note 1) Min Typ Max 150 46 Units mJ A Drain-Source Avalanche Ratings W DSS IAR Single Pulse Drain-Source VDD = 15 V, ID = 46 A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 25 1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 12 A VGS = 10 V, ID = 12 A,TJ=125C VGS = 4.5 V, ID =10 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 12 A 1 1.6 -4 .0009 .0015 .0120 3 V mV/C 0.012 0.019 0.016 ID(on) gFS On-State Drain Current Forward Transconductance 50 44 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1700 340 140 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 10 12 35 10 18 22 56 18 23 ns ns ns ns nC nC nC VDS = 15 V, ID = 12 A, VGS = 5 V, 17 5 6 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 2.3 0.72 1.3 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA= 45oC/W when mounted on a 1in2 pad of 2oz copper. b) RJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDD6690A, Rev. B2 FDD6690A Typical Characteristics 40 VGS = 10V 30 3.5V 20 6.0V 4.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 2.6 2.4 2.2 2 1.8 1.6 4.0V 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 0 10 20 ID, DRAIN CURRENT (A) 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) 4.5V 5.0V 7.0V 10V 3.5V VGS = 3.0V 10 2.5V 0 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 12A VGS = 10V ID = 6 A 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o TA = 125 C o TA = 25 C 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 1 2 3 4 5 TA = -55 C o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS , REVERSE DRAIN CURRENT (A) VDS = 5V 25 C 125 C o VGS = 0V 10 TA = 125 C 1 25 C 0.1 -55 C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 o o o VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6690A, Rev. B2 FDD6690A Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12A 8 (continued) 2500 VDS = 5V 15V CAPACITANCE (pF) 10V 2000 CISS 1500 f = 1MHz VGS = 0 V 6 4 1000 2 500 COSS CRSS 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 35 0 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 100s 1ms 10ms 100ms 1S 10S DC VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0.01 0.1 1 10 100 o o 60 SINGLE PULSE RJA = 96 C/W TA = 25 C POWER (W) 40 o o ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1 20 0.1 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.01 R JA (t) = r(t) * R JA R JA = 96C/W 0.02 Single Pulse P(pk) 0.01 t1 t2 0.001 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.0001 0.0001 0.001 0.01 0.1 t , TIME (sec) 1 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDD6690A, Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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