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FDS6890A
November 1999
FDS6890A
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features * 7.5 A, 20 V. RDS(ON) = 0.018 * *
@ VGS = 4.5 V RDS(ON) = 0.022 @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications * DC/DC converter * Motor drives
* *
D2 D1 D1 S2 G2 D2
5 6 7 8 4 3 2 1
pin 1
G1 S1
SO-8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A=25 oC unless otherwise noted
Parameter
Ratings
20 8
(Note 1a)
Units
V V A W
7.5 20 2.0
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 -55 to +150 C
T J, T stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40 90
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6890A Device FDS6890A Reel Size 13 Tape W idth 12mm Quantity 2500 units
1999 Fairchild Semiconductor Corporation
FDS6890A Rev. C
FDS6890A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25 C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID =7.5 A VGS = 4.5 V, ID =7.5 A, TJ =125C VGS = 2.5 V, ID =6.5 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.5 A
0.5
0.8 -3.5 0.013 0.021 0.016
1.5
V mV/C
0.018 0.034 0.022
ID(on) gFS
20 35
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
2130 545 270
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
13 26 65 23
24 42 90 37 32
ns ns ns ns nC nC nC
VDS = 10 V, ID = 7.5 A, VGS = 4.5 V,
23 3.2 4.4
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
1.3 0.65 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 78 C/W when mounted on a 0.5 in2 pad of 2 oz. copper.
b) 125 C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
c) 135 C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
FDS6890A Rev. C
FDS6890A
Typical Characteristics
(continued)
30 2.0V 24
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS=4.5V 2.5V
ID, DRAIN-SOURCE CURRENT (A)
1.6
VGS =1.8V 2.0V
18
1.8V
1.4 2.5V 3.0V 3.5V 1
4.5
12
1.2
6
1.5V
0 0 0.5 1 1.5 2 2.5 3
0.8 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
o TJ, JUNCTION TEMPERATURE ( C)
0.05 RDS(ON), ON-RESISTANCE (OHM)
ID = 7.5A VGS = 4.5V
ID =3.8A 0.04
0.03 TA = 125 C TA = 25 C 0.01
o o
0.02
0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
30 VDS = 5V ID, DRAIN CURRENT (A) 24
125 C
o
IS, REVERSE DRAIN CURRENT (A)
TA = -55 C
o
100 25 C
o
VGS=0 10 1 0.1 0.01 0.001 0.0001
o
18
TJ=125 C 25 C -55 C
o o
12
6
0 0.5 1 1.5 2 2.5 3
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6890A Rev. C
FDS6890A
Typical Characteristics
(continued)
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.5A 4 VDS = 5V 10V
3200 f = 1 MHz VGS = 0 V CAPACITANCE (pF)
15V
2400 CISS 1600
3
2
1
800 COSS CRSS 0
0 0 6 12 18 24 30
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o
30 100s 1ms 100ms 25 20 15 10 5 0 0.01
SINGLE PUL SE RJ A =13 5 C/W TA = 25 C
1
0.1
POWER (W)
0.1
0.5
10
50 100
300
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 T RANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0 .005 0 .002 0 .001 0. 001 0 0 .001 0.01 0.1 t1, TIME (s ec) 1
D = 0 .5 0 .2 0 .1 05 .0 P(p k) 02 .0 01 .0 S in g le P ul s e
r (t , NO RMAL IZED EFF T ) EC IVE
R JA ( t) = r( t * RJA ) R JA = 135 C/W
t1
t2
TJ - TA = P * RJA (t) D u t y C y c l e, D = t1 /t
10 100
2
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.
FDS6890A Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E

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