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| Datasheet File OCR Text: |
| HE8811 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment. Features * High-frequency response * High efficiency and high output power * Broad radiation pattern Absolute Maximum Ratings (TC = 25C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3 -20 to +60 -40 to +90 Units mA V C C 250 HE8811 Optical and Electrical Characteristics (TC = 25C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise Time Fall time Symbol PO p VF IR Ct tr tf Min 20 780 -- -- -- -- -- 7 Typ 30 820 50 -- -- 10 5 10 Max -- 900 -- 2.5 100 -- -- -- Units mW nm nm V A pF ns ns Test Conditions I F = 150 mA I F = 150 mA I F = 150 mA I F = 150 mA VR = 3 V VR = 0 V, f = 1 MHz I F = 50 mA I F = 50 mA Typical Characteristic Curves 251 HE8811 Typical Characteristic Curves (cont) 252 |
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