 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STC03DE170 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBTTM 1700 V - 3 A - 0.55 W Table 1: General Features VCS(ON) 1V n n n n Figure 1: Package RCS(ON) 0.55 W IC 1.8 A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.7 W 3 4 APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170 is designed for use in aux flyback smps for any three phase application. 1 2 TO247-4L Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STC03DE170 Marking STC03DE170 Package TO247-4L Device Structure Packaging TUBE October 2004 Rev. 2 1/9 STC03DE170 Table 3: Absolute Maximum Ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 1700 30 9 20 3 6 2 4 100 -65 to 125 125 Unit V V V V A A A A W C C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max 1 Unit o C/W Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICS(SS) IBS(OS) ISB(OS) Parameter Collector-Source Current (VBS = VGS = 0 V) Base-Source Current (IC = 0 , VGS = 0 V) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage VCS(ON) Collector-Source ON Voltage hFE DC Current Gain VGS = 20 V VGS = 10 V IC = 1.8 A VGS = 10 V IC = 0.7 A IC = 1.8 A IC = 0.7 A IB = 0.36 A IB = 70 mA 3.5 6 1 1 5 10 1 0.8 1.5 2.2 750 12.5 1.2 1 3 V V V pF nC 500 1.5 1.3 nA V V VSB(OS) = 9 V 100 mA Test Conditions VCS(SS) = 1700 V VBS(OS) = 30 V Min. Typ. Max. 100 10 Unit mA mA VCS = 1 V VGS = 10 V VBS(ON) Base-Source ON Voltage VGS(th) Ciss Gate Threshold Voltage Input Capacitance VCS = 1 V VGS = 10 V VGS = 10 V IC = 1.8 A IB = 0.36 A VGS = 10 V IC = 0.7 A VBS = VGS VCS = 25 V VGS = VCB = 0 VCS = 15 V VCB = 0 VGS = 10 V RG = 47 W tp = 4 ms VClamp = 1200 V IC = 1.8 A IB = 0.36 A IB = 70 mA IB = 250 mA f = 1MHZ VGS = 10 V IC = 1.8 A QGS(tot) Gate-Source Charge INDUCTIVE LOAD ts tf Storage Time Fall Time 760 14 ns ns 2/9 STC03DE170 Symbol ts tf VCSW Parameter INDUCTIVE LOAD Storage Time Fall Time VGS = 10 V RG = 47 W tp = 4 ms VClamp = 1200 V IC = 0.7 A IB = 70 mA IC = 3 A VGS = 10 V IC = 0.5 A IBpeak = 1 A VGS = 10 V IC = 0.5 A IBpeak = 1 A 2.2 V 1500 3.9 690 32 ns ns V V Test Conditions Min. Typ. Max. Unit Maximum Collector-Source RG = 47 W hFE = 5 A Voltage without Snubber VCS(dyn) Collector-Source Dynamic VCC = VClamp = 400 V Voltage RG = 47 W (500 ns) IB = 0.1 A tpeak = 500 ns VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 400 V RG = 47 W IB = 0.1 A tpeak = 500 ns 3/9 STC03DE170 Figure 3: Safe Operating Area Figure 6: Output Characteristics Figure 4: Reverse Biased Safe Operating Area Figure 7: Gate Threshold Voltage vs Temperature Figure 5: DC Current Gain Figure 8: DC Current Gain 4/9 STC03DE170 Figure 9: Collector-Source On Voltage Figure 12: Collector-Source On Voltage Figure 10: Base-Source On Voltage Figure 13: Base-Source On Voltage Figure 11: Inductive Load Switching Time Figure 14: Inductive Load Switching Time 5/9 STC03DE170 Figure 15: Dynamic Collector-Emitter Saturation Voltage Figure 16: Inductive Load Enlargement FBSOA Circuit Table 6: Components, Values VB1 = 4.16 V D1 = BA157 R1 = 1 W R2 = 100 W R3 = VCC / I Cn Rg = 47 W C1 = 220 nF C2 70 pF C3 = 50 nF Vg = 10 V Pulse Time = 5 ms 6/9 STC03DE170 TO247-4L MECHANICAL DATA DIM. MIN. A A1 b b1 b2 c D E e e1 L L1 L2 OP OR S 3.55 4.50 5.50 14.20 3.70 18.50 3.65 5.50 4.85 2.20 0.95 1.30 2.50 0.40 19.85 15.45 2.54 5.08 14.80 4.30 1.10 mm TYP. MAX. 5.15 2.60 1.30 1.70 2.90 0.80 20.15 15.75 7536918A 7/9 STC03DE170 Table 7: Revision History Date 13-Sep-2004 04-Oct-2004 Release 1 2 Change Designator First Release. Figure 15 has been updated on page 6. 8/9 STC03DE170 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
Price & Availability of STC03DE170
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |