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| Advance Product Information February 6, 2006 High Power Ka-Band SPDT Switch * * * * * * * * * TGS4302 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed AP640R2-00 Replacement VPIN Technology Chip Dimensions: 1.09 x 1.09 x 0.10 mm (0.043 x 0.043 x 0.004 inches) Key Features and Performance Primary Applications Preliminary Data VA = +5V, IA 0mA, VB = -5V, IB = 20mA 0 S21 S11 -1 Gain (dB) S13 S22 0 10 Return Loss / Isolation (dB) * * * Ka-Band Transmit / Receive Point-to-Point Radio Point-to-Multipoint Radio Description The TriQuint TGS4302 is a GaAs singlepole, double-throw (SPDT) PIN monolithic switch designed to operate over the Ka-Band frequency range. This switch maintains a low insertion loss with high power handling of 33dBm or greater input P1dB at VC = 7.5V. These advantages, along with the small size of the chip, make the TGS4302 ideal for use in communication and transmit/receive applications. -2 -10 -3 -20 -4 25 30 35 40 Frequency (GHz) 45 50 -30 Note: This device is early in the characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 TABLE I MAXIMUM RATINGS Symbol VC IC PIN TM TSTG 1/ 2/ 3/ 4/ 5/ Parameter 1/ Control Voltage Control Current Input Continuous Wave Power Mounting Temperature (30 Seconds) Storage Temperature Value -5V to +25V 22.5 mA 38 dBm 320 C -65 to 150 C 0 0 Notes 2/, 3/ 2/ 3/ 3/ 4/, 5/ These ratings represent the maximum operable values for this device. VC and IC are both per bias pad. Operation above 30dBm requires control voltages above +5V. When operated at this bias condition with a base plate temperature of 70 C, the median life is TBD hours. Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels 0 TABLE II DC PROBE TEST (TA = 25 C, Nominal) NOTES SYMBOL RFWD VREV MIN 3.5 -30 LIMITS MAX 6 -60 UNITS V 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 TABLE III RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (VA = +5V, IA = 0mA, VB = -5V, IB = 20mA) Symbol Parameter Test Conditions F = 27 - 30 GHz F = 30 - 40 GHz F = 40 - 46 GHz F = 27 - 46 GHz VC = +5V VC = +7.5V VC = +10V VC = +15V Typ 1.3 0.9 1.3 10 31 33 35 38 Units Notes IL Insertion Loss dB RL Return Loss dB P1dB Output Power @ 1dB Gain Compression dBm 1/ 2/ Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. 1/ 2/ Frequency = 30GHz 10V & 15V points are extrapolated from the data 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 Preliminary Data IA = 0mA, VB = -5V, IB = 20mA 0 S21 S11 -1 Gain (dB) S31 S22 TGS4302 10 Return Loss / Isolation (dB) 4 0 -2 -10 -3 -20 -4 25 -0.6 -0.8 -1 Gain (dB) -1.2 -1.4 -1.6 -1.8 -2 10 12 14 16 18 20 22 24 26 Pin (dBm) 28 30 32 -30 30 35 40 Frequency (GHz) 45 50 +5V +7.5V +10V +15V +20V F = 30GHz 34 36 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 Preliminary Data IA = 0mA, VB = -5V, IB = 10mA, F = 30GHz -0.6 -0.8 -1 Gain (dB) -1.2 -1.4 -1.6 -1.8 -2 10 12 14 16 18 20 22 24 26 Pin (dBm) 28 30 32 34 36 +5V +7.5V +10V +15V +20V 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 TABLE IV TRUTH TABLE Selected RF Output RF Out A RF Out B VA +5V @ ~0mA -5V @ 20mA VB -5V @ 20mA +5V @ ~0mA Operation at RF power levels >30 dBm requires increasing the positive voltage level to put a larger reverse bias on the diodes while the negative voltage level remains at -5 V with a current of approximately 20mA. Bond pads IA and IB bypass the on-chip series resistors to allow adjustment of the current to the diodes in their forward biased state. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 Mechanical Drawing TGS4302 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 Chip Assembly & Bonding Diagram TGS4302 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 Alternate Chip Assembly & Bonding Diagram Refer to Table V for values of R vs. control voltage 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 TABLE V BIAS RESISTOR VALUES Maximum Negative Bias Voltage -5V -7.5V -10V -15V -20V R 190 Ohms 315 Ohms 440 Ohms 690 Ohms 940 Ohms 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 6, 2006 TGS4302 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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