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| TIS98 Discrete POWER & Signal Technologies TIS98 E BC TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 60 80 6.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TIS98 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation TIS98 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO I CBO I EBO Collector-Emitter Breakdown Voltage* Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, I B = 0 VCB = 40 V, IE = 0 VCB = 80 V, IE = 0 VEB = 6.0 V, I C = 0 60 10 10 20 V nA A nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, I C = 1.0 mA IC = 10 mA, IB = 0.1 mA IC = 100 mA, I B = 5.0 mA IC = 1.0 mA, VCE = 5.0 V 100 300 1.0 0.5 0.7 V V V 0.5 SMALL SIGNAL CHARACTERISTICS Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz I C = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz I C = 10 mA, VCE = 5.0 V, f = 100 MHz I C = 1.0 mA, VCE = 5.0 V, f = 100 MHz 100 2.0 30 1.0 4.0 16 400 pF pF yfe Forward Trans-conductance mmhos *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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