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| 2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 - 175 MHz range. PACKAGE STYLE .380 4L STUD .112x45 A B C E OC FEATURES: * Minimum Gain = 7.6 dB * Output Power = 40 W * OmnigoldTM Metalization System E B I J D H #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 5.0 A DIM MINIMUM inches / mm MAXIMUM inches / mm 65 V 35 V 4.0 V 60 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 2.9 C/W A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB GP C TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V VCE = 10 V POUT = 40 W IC = 200 mA IC = 500 mA f = 1.0 MHz f = 175 MHz f = 100 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 1.0 5.0 45 7.6 8.1 60 --65 --- UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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