|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (HF to 800 MHz) * Internal input damping for excellent stability over the whole frequency range. APPLICATIONS * Communication transmitter applications in the HF to 800 MHz frequency range. 3 4 MBK777 BLF647 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION 1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 VDS (V) 28 28 PL (W) 120 120 (PEP) Top view Fig.1 Simplified outline. Gp (dB) >14.5 >14.5 D (%) >55 >40 dim (dBc) - -26 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Tmb 25 C CONDITIONS - - - - -65 - MIN. MAX. 65 15 18 290 +150 200 V V A W C C UNIT 2001 Nov 27 2 Philips Semiconductors Product specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 290 W BLF647 VALUE 0.6 0.2 UNIT K/W K/W CHARACTERISTICS Tj = 25 C per section unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values of the die only. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 20 V; ID = 140 mA VGS = 0; VDS = 28 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 20 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 28 V; f = 1 MHz; note 1 VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 4 - 18 - - - - - - TYP. - - - - - 4 160 80 43 6 MAX. - 5.5 1.2 - 25 - - - - - UNIT V V A A nA S m pF pF pF MGW546 handbook, halfpage 100 Coss (pF) 80 60 40 20 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 C. Fig.2 Output capacitance as a function of drain-source voltage; typical values per section. 2001 Nov 27 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.2 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB 2-tone, class-AB CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 800 f1 = 800; f2 = 800.1 VDS (V) 28 28 32 32 PL (W) 120 120 (PEP) 150 150 (PEP) Gp (dB) >14.5 >14.5 typ. 12.5 typ. 13 D (%) >55 >40 typ. 60 typ. 45 dim (dBc) - -26 - typ. -30 Ruggedness in class-AB operation The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power. The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions. Impedances (per section) At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 and ZL = 2.7 + j0.7 . At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 and ZL = 1.8 + j0.7 . 2001 Nov 27 4 Philips Semiconductors Product specification UHF power LDMOS transistor Application at 600 MHz MGW540 BLF647 MGW541 handbook, halfpage 20 80 Gp handbook, halfpage 0 Gp (dB) 15 D (%) 60 dim (dBc) -20 d3 D 10 40 -40 d5 5 20 -60 0 0 50 100 150 PL (PEP) (W) 0 200 -80 0 50 100 150 PL (PEP) (W) 200 Th = 25 C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (-6 dB); f2 = 600.1 MHz (-6 dB) measured in 600 MHz test circuit. Th = 25 C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (-6 dB); f2 = 600.1 MHz (-6 dB) measured in 600 MHz test circuit. Fig.3 Power gain and drain efficiency as functions of peak envelope load power; typical values. Fig.4 Intermodulation distortion as a function of peak envelope output power; typical values. MGW542 handbook, halfpage 20 80 Gp Gp (dB) 15 D (%) 60 D 10 40 5 20 0 0 50 100 150 PL (W) 0 200 Th = 25 C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz; measured in 600 MHz test circuit. Fig.5 Power gain and drain efficiency as functions of load power; typical values. 2001 Nov 27 5 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 2001 Nov 27 3 C7 R2 L5 L15 L3 L7 L9 50 input B1 L2 C2 L10 TR1 L4 L16 + Vbias R1 C9 R3 C8 L6 L8 L12 C16 MGW539 Philips Semiconductors handbook, full pagewidth UHF power LDMOS transistor + VD C20 L14 8 C18 L11 C15 C19 R4 C1 L1 C3 C5 C6 C11 C10 C13 B2 C12 C14 50 C17 output 6 Dimensions in mm. L13 Product specification BLF647 Fig.6 Class-AB common source 600 MHz test circuit. Philips Semiconductors Product specification UHF power LDMOS transistor List of components class-AB 600 MHz test circuit (see Figs 6 and 7) COMPONENT C1, C2 C3 C5 C6 C7, C8 C9 C10 C11, C12 C13 C14 C15, C16, C17 C18 C19 C20 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13 L14 L15, L16 B1 B2 R1 R2, R3 R4 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 Tekelec trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 SMD capacitor electrolytic capacitor electrolytic capacitor semi rigid coax UT70-25 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 ferrite Coilcraft SMD coil 1008CS-102XKBC semi rigid coax (lambda/2) semi rigid coax balun UT70-25 resistor resistor resistor 1 H Z = 50 1.5 lambda/2 Z = 25 1.5 48.5 mm 1 k 100 3,3 VALUE 30 pF 8.2 pF 16 pF 0.6 to 7.5 pF 100 pF 10 F 2 pF 10 pF 8.2 pF 1.5 pF 100 pF 1 F 470 F 100 F Z = 25 1.5 30.6 mm 15 x 10 mm 5.5 x 15 mm 10 x 10 mm 15 x 5 mm 48.5 x 2.4 mm 10 x 2.4 mm DIMENSIONS BLF647 CATALOGUE No. 2222 595 16754 3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm. 2001 Nov 27 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 handbook, full pagewidth 95 95 80 +Vbias R1 C9 C7 C1 C2 B1 L1 L2 C8 R3 R2 L15 B2 +VD C20 L14 R4 C18 BLF647 C3 C5 C6 3 L16 C11 C13 C10 C12 C14 C15 C16 C17 8 C19 MGW547 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit. 2001 Nov 27 8 Philips Semiconductors Product specification UHF power LDMOS transistor Application at 800 MHz MGW543 BLF647 MGW544 handbook, halfpage 20 80 handbook, halfpage 0 Gp (dB) 15 Gp D (%) 60 dim (dBc) -20 d3 d5 10 D 40 -40 5 20 -60 0 0 100 0 200 300 PL (PEP) (W) -80 0 100 200 300 PL (PEP) (W) Th = 25 C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 800 MHz (-6 dB); f2 = 800.1 MHz (-6 dB) measured in 800 MHz test circuit. Th = 25 C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 800 MHz (-6 dB); f2 = 800.1 MHz (-6 dB) measured in 800 MHz test circuit. Fig.8 Power gain and drain efficiency as functions of peak envelope load power; typical values. Fig.9 Intermodulation distortion as a function of peak envelope output power; typical values. MGW545 handbook, halfpage 20 80 Gp (dB) 15 Gp D (%) 60 10 40 D 5 20 0 0 50 100 150 PL (W) 0 200 Th = 25 C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz; measured in 800 MHz test circuit. Fig.10 Power gain and drain efficiency as functions of load power; typical values. 2001 Nov 27 9 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... ok, full pagewidth 2001 Nov 27 3 C7 R2 L15 L3 50 input B1 L2 C2 C1 L1 C5 C6 Philips Semiconductors UHF power LDMOS transistor + VD C20 3 L5 L7 L9 L11 C15 C19 C10 C11 C12 C13 L12 C14 B2 L13 C16 MGW538 L14 8 C18 R4 50 C17 output 10 Dimensions in mm. L10 TR1 L4 L16 + Vbias R1 C9 R3 C8 L6 L8 Product specification BLF647 Fig.11 Class-AB common source 800 MHz test circuit. Philips Semiconductors Product specification UHF power LDMOS transistor List of components class-AB 800 MHz test circuit (see Figs 11 and 12) COMPONENT C1, C2 C5 C6 C7, C8 C9 C10, C11 C12, C13 C14 C15, C16 C17 C18 C19 C20 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13 L14 L15, L16 B1 B2 R1 R2, R3 R4 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 tekelec trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 SMD capacitor electrolytic capacitor electrolytic capacitor semi rigid coax UT70-25 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 ferrite Coilcraft SMD coil 1008CS-102XKBC semi rigid coax (lambda/2) semi rigid coax balun UT70-25 resistor resistor resistor 1 H Z = 50 1.5 lambda/2 Z = 25 1.5 48.5 mm 1 k 100 3,3 VALUE 30 pF 10 pF 0.6 to 7.5 pF 100 pF 10 F 8.2 pF 10 pF 4.7 pF 100 pF 20 pF 1 F 470 F 100 F Z = 25 1.5 30.6 mm 15 x 10 mm 5.5 x 15 mm 10 x 10 mm 15 x 5 mm 48.5 x 2.4 mm 10 x 2.4 mm DIMENSIONS BLF647 CATALOGUE No. 2222 595 16754 3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm. 2001 Nov 27 11 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 handbook, full pagewidth 95 95 80 +Vbias R1 C9 C7 C1 C2 B1 L1 L2 C8 R3 R2 L15 B2 +VD C20 L14 R4 C18 BLF647 C5 C6 3 L16 C11 C13 C14 C15 C16 C17 C10 C12 3 8 C19 MGW548 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit. 2001 Nov 27 12 Philips Semiconductors Product specification UHF power LDMOS transistor PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads BLF647 SOT540A D A F D1 U1 q H1 C w2 M C M B c 1 2 H U2 p E1 w1 M A M B M E 5 A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 b 8.51 8.26 c 0.15 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.38 3.12 Q 2.72 2.46 q 27.94 U1 34.16 33.91 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25 22.05 22.05 10.26 10.31 10.21 21.64 21.64 10.06 10.01 15.75 18.72 14.73 18.47 0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380 OUTLINE VERSION SOT540A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-08-27 99-12-28 2001 Nov 27 13 Philips Semiconductors Product specification UHF power LDMOS transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BLF647 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Nov 27 14 Philips Semiconductors Product specification UHF power LDMOS transistor NOTES BLF647 2001 Nov 27 15 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp16 Date of release: 2001 Nov 27 Document order number: 9397 750 08838 |
Price & Availability of BLF647 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |