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| BSM 100 GAL 120 DN2 IGBT Power Module * Single switch with chopper diode * Including fast free-wheeling diodes * Package with insulated metal base plate Type BSM 100 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package Ordering Code 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 150 100 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 300 200 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 800 W + 150 -55 ... + 150 0.16 0.3 0.25 2500 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD RTHJCDC Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5 1.5 6 6.5 3.7 3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 100 A, Tj = 25 C VGE = 15 V, IC = 100 A, Tj = 125 C Zero gate voltage collector current ICES 2 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 200 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 54 6.5 1 0.5 - S nF - VCE = 20 V, IC = 100 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 130 260 ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Rise time tr 80 160 VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Turn-off delay time td(off) 400 600 VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Fall time tf 70 100 VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage VF 2.3 1.8 2.8 - V IF = 100 A, VGE = 0 V, Tj = 25 C IF = 100 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.3 - s IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s Tj = 25 C Tj = 125 C 4 14 - Semiconductor Group 3 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Chopper Diode Chopper diode forward voltage VFC 2.3 1.8 2.8 - V IFC = 150 A, VGE = 0 V, Tj = 25 C IFC = 150 A, VGE = 0 V, Tj = 125 C Reverse recovery time, chopper trrC 0.4 - s IFC = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C Reverse recovery charge, chopper QrrC C IFC = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C Tj = 125 C 5 18 - Semiconductor Group 4 Mar-29-1996 BSM 100 GAL 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g |
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