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| High Voltage Transistor (NPN) BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COMCHIP www.comchiptech.com COLLECTOR 3 1 BASE SOT-23 .119 (3.0) .110 (2.8) 2 EMITTER .020 (0.5) Top View .056 (1.40) .047 (1.20) .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .006 (0.15)max. .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.225 150 -55~+150 MDS0405003A Page 1 .044 (1.10) .035 (0.90) Unit V V V mA W C C High Voltage Transistor (NPN) Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 52 Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 Unit V V V A nA A V V MHz pF COMCHIP www.comchiptech.com Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V, IE=0 VCE=300V, REB=4k VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range K 52~120 P 82~180 Q 120~270 MDS0405003A Page 2 High Voltage Transistor (NPN) Characteristic Curves COMCHIP www.comchiptech.com MDS0405003A M Page 3 |
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