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| Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitoring chip temperature. The device is intended for use in automotive and general purpose switching applications. BUK9120-48TC QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj RDS(ON) VF -SF PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V Forward voltage,temperature sense diodes Negative temperature coefficient, temperature sense diodes MIN. 40 TYP. 45 MAX. UNIT 55 52 116 175 20 735 1.54 V A W C m mV mV/K 685 1.26 710 1.4 PINNING - SOT426 PIN 1 2 3 4 5 mb gate T1 (connected to mb) T2 source drain DESCRIPTION PIN CONFIGURATION SYMBOL d mb T1 g 3 T2 12 45 s Fig. 2. Fig. 1. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDG VGS ID ID ID IDM Ptot IGD IGS VTS Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Drain-gate clamp current Gate-source clamp current Source T1/T2 voltage Storage temperature Junction temperature CONDITIONS continuous continuous Tmb = 25 C Tmb = 100 C Tmb = 140 C Tmb = 25 C Tmb = 25 C 5ms pulse; = 0.01 5ms pulse; = 0.01 MIN. - 55 - 55 MAX. 40 38 10 52 37 25 208 116 50 50 100 175 175 UNIT V V V A A A A W mA mA V C C February 1998 1 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes ESD LIMITING VALUE SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 2 UNIT kV Electrostatic discharge voltage, Human body model (100pF,1.5K) pins 1,3,5 THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board TYP. 50 MAX. 1.29 UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL V(BR)DG VGS(TO) IDSS IDSS IGSS V(BR)GSS RDS(ON) VF -SF VHYS PARAMETER Drain-gate zener voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current CONDITIONS 250uA; -55C < Tj < 175C VDS = VGS; ID = 1 mA; Tj = 175C Tj = -55C VDS = +35 V; VGS = 0 V; Tj =175 C VDS = +15 V; VGS = 0 V; Tj =175 C MIN. 38 1.0 0.5 10 685 1.26 25 TYP. 43 1.5 0.1 0.004 0.02 16 710 1.4 MAX. 2.0 2.3 100 250 2 250 1 10 20 42 735 1.54 50 UNIT V V V V A A A A A A V m m V mV mV/K mV VGS = 5 V; VDS = 0 V; Tj =175 C Gate source breakdown voltage 1 mA; Drain-source on-state resistance Forward voltage, temperature sense diodes Negative temperature coefficient, temperature sense diodes from 25 C to 140 C Forward voltage hysteresis; temperature sense diodes VGS = 5 V; ID = 20 A Tj =175 C IF = 250 uA; IF = 250 uA IF = 125 uA to 250uA February 1998 2 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL V(CL)DSR gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Drain source clamp voltage (peak value) Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS RG = 10 k; ID = 10 A; -55 < Tj < 175C VDS = 25 V; ID = 10 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 40 20 TYP. 45 53 2200 400 215 12 55 60 45 2.5 7.5 MAX. 55 2900 500 300 18 80 85 60 UNIT V S pF pF pF s s s s nH nH VDD = 30 V; ID = 25 A; VGS = 5 V; RG = 10 k; Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL IDR IDRM VSD PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage CONDITIONS IF = 20 A ; VGS = 0 V IF = 40 A ; VGS = 0 V MIN. TYP. 0.95 1 MAX. 52 208 1.2 UNIT A A V V CLAMPED ENERGY LIMITING VALUE SYMBOL WDSRS PARAMETER Non-repetitive drain-source clamped inductive turn off energy CONDITIONS Tj = 25C prior to clamping; ID = 20 A; VDD < 16 V; VGS = 5 V; RG = 10 k; inductive load MIN. MAX. 450 UNIT mJ February 1998 3 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth/(K/W) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 tp T t P D tp D= T 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 1E-06 0.0001 0.01 t/s 1 100 Fig.3. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) ID% Normalised Current Derating 150 ID/A Fig.6. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 120 110 100 90 80 70 60 50 40 30 20 10 0 10 8 6 VGS/V = 5 4.8 4.6 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 100 50 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 0 2 4 6 VDS/V 8 10 Fig.4. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V 1000 ID/A RDS(ON) =VDS/ID 100 tp = 1 us 10us 100 us DC 10 1 ms 10ms 100ms Self Clamped 1 1 10 VDS/V 100 Fig.7. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS RDS(ON)/mOhm VGS/V = 3 0.025 3.5 4 4.5 0.02 5 6 0.015 0.03 0.01 0.005 0 20 40 ID/A 60 80 100 Fig.5. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.8. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS February 1998 4 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes 100 ID/A 80 50 49 48 V(CL)DSR/V Tmb / degC = 175 25 -55 60 47 40 46 45 20 Tj/C = 175 25 0 0 1 2 VGS/V 3 4 5 6 44 43 0 5 RG/kOhm 10 15 Fig.9. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 50 gfs/S 40 0.9 Vf/V 0.8 Fig.12. Typical clamping voltage V(CL)DSR = f(RG); conditions: ID = 10 A 0.7 30 0.6 If/uA = 500 0.5 250 100 20 10 0.4 50 25 0 50 100 Diode Temperature /C 150 200 0 0 20 40 ID/A 60 80 100 0.3 -50 Fig.10. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V V(CL)DSR/V Fig.13. Typical Vf of sense diodes Vf = f(K); parameter If Vf Temperature Coefficient / mV/K 48 47 46 -1.25 -1.3 -1.35 45 44 43 Tmb / degC = 42 41 40 0 2 4 6 8 175 25 -55 10 12 -1.4 -1.45 -1.5 -1.55 ID/A 0 50 100 Diode Temperature /C 150 Fig.11. Typical clamping voltage V(CL)DSR = f(ID); conditions: RG = 10 kOhm Fig.14. Typical Vf temperature coefficient Vf Temp.Coef.= f(K); conditions: IF = 250 uA February 1998 5 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes 2.5 Rds(on) normlised to 25degC BUK959-60 6 5 2 Thousands pF 4 1.5 3 Ciss 2 1 1 0.5 -100 -50 0 50 Tmb / degC 100 150 200 0 0.01 Coss Crss 0.1 1 VDS/V 10 100 Fig.15. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V VGS(TO) / V max. 2 typ. 1.5 min. 1 BUK959-60 Fig.18. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 6 VGS/V 5 VDS = 14V VDS = 35V 2.5 4 3 2 0.5 1 0 -100 -50 0 50 Tj / C 100 150 200 0 0 10 20 QG/nC 30 40 Fig.16. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Sub-Threshold Conduction Fig.19. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS 100 IF/A 1E-01 1E-02 2% typ 98% 80 1E-03 60 1E-04 40 Tj/C = 175 25 1E-05 20 1E-05 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 VSDS/V 1.5 2 Fig.17. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS Fig.20. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj February 1998 6 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSRS% + RD VDS VGS 0 RG T.U.T. VDD - 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.21. Normalised avalanche energy rating. WDSRS% = f(Tmb); conditions: ID = 20 A Fig.23. Switching test circuit. + L VDS VGS 0 RGS T.U.T. R 01 shunt VDD I,V V(CL)DSR 5V ID VDS VGS -ID/100 P,E t PDS = ID x VDS E = PDS dt WDSR t Fig.22. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) Fig.24. Typical Inductive Clamping Waveforms February 1998 7 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 MAX 1.4 MAX 4.5 MAX 11 MAX 15.4 0.85 MAX (x4) 3.4 1.7 1.7 3.4 2.5 0.5 Fig.25. SOT426 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 3.4 1.7 3.8 1.3 (x4) 1.7 Fig.26. SOT426 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". February 1998 8 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 9 Rev 1.100 |
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