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| LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IF IFAV PV Tj Tstg Value 50 50 4 600 300 500 200 -65...+200 Unit V V A mA mA mW C C tp=1ms VR=0 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions Type IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA Reverse current VR=50V VR=50V, Tj=150C Diode capacitance VR=0, f=1MHz, VHF=50mV Reverse recovery time IF=IR=10...100mA, iR=0.1xIR, RL=100W Symbol VF VF VF VF VF IR IR CD trr Min Typ 0.54 0.66 0.76 0.82 0.87 Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V V V V V nA mA pF ns Document Number 85558 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (3) LL4150 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 100 I R - Reverse Current ( mA ) Scattering Limit 10 IF - Forward Current ( mA ) 1000 100 Scattering Limit 10 1 0.1 VR = 50 V 0 40 80 120 160 200 1 Tj = 25C 0 0.4 0.8 1.2 1.6 2.0 0.01 94 9100 0.1 94 9162 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage Dimensions in mm 96 12070 www.vishay.de * FaxBack +1-408-970-5600 2 (3) Document Number 85558 Rev. 3, 01-Apr-99 LL4150 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85558 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (3) |
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