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| 27-March'98 PRELIMINARY Notice : This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET OUTLINE DRAWING Unit:millimeters (inches) DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24 +/- 0.3 FEATURES Internally matched to 50 ohm system High output power P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz High power gain GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L. (1) 2 R1.2 0.6 +/- 0.15 (2) 1 8 APPLICATION 5.9 - 6.4 GHz band amplifiers 2 (3) . 20.4 +/- 0.2 16.7 QUALITY GRADE IG VDS = 10V ID = 8 A Rg=25 ohm 4 7 RECOMMENDED BIAS CONDITIONS . 1 0 Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 30 -60 126 125 175 -65/+175 Unit V .4 GF-38 . (1) GATE (2) SOURCE(FIANGE) (3) DRAIN . . M 0 A mA mA W deg.C deg.C M 3 V *1 : Tc=25 Deg.C ABSOLUTE MAXIMUM RATINGS I 4 Symbol IDSS Gm VGS(off) P1dB GLP PAE IM3 Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency 3rd order IM distortion Thermal resistance *1 Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA I Limits Typ 24 8 45 9 33 -45 Max -5 1.0 Unit A S V dBm dB % dBc Deg.C/W 44.5 VDS = 10V , ID = 8A , f = 5.9 - 6.4 GHz 8 -42 Delta Vf method - *1 : Channel to case *2 : Item-51,2tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz, Delta f=10MHz N MITSUBISHI ELECTRIC 1 4 2 27-March'98 PRELIMINARY Notice : This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC45V5964A 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET (Ta=25 Deg.C) Po , PAE vs. Pin TYPICAL CHARACTERISTICS P1dB ,GLP vs. f OUTPUT POWER P1dB (dBm) 47 46 45 44 43 42 41 VDS=10(V) IDS=8(A) 14 P1dB 50 VDS=10(V) IDS=8(A) f=6.15(GHz) Po 50 13 12 11 10 9 8 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 LINEAR POWER GAIN GLP(dB) OUTPUT POWER Po(dBm) 45 40 40 30 GLP 35 PAE 20 30 10 25 20 25 30 35 40 45 0 FERQUENCY (GHz) INPUTPOWER Pin(dBm) Po IM3 vs. Pin 44 OUTPUT POWER Po (dBm S.C.L.) 42 40 38 36 34 32 30 28 26 24 22 20 VDS=10(V) IDS=8(A) f=6.4(GHz) Delta f=10(MHz) 0 Po -10 -20 -30 -40 IM3 -50 -60 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin(dBm S.C.L.) S PARAMETERS f (GHz) 5.90 6.00 6.10 6.20 6.30 6.40 Magn. 0.61 0.55 0.48 0.41 0.34 0.28 (Ta=25 Deg.C , VDS=10V , IDS=8A) S Parameters (TYP.) S21 Magn. 2.957 3.071 3.119 3.148 3.143 3.122 Angle(deg.) -44 -62 -81 -100 -118 -137 Magn. 0.04 0.05 0.06 0.07 0.08 0.09 159 138 115 92 65 36 S12 Angle(deg.) -117 -134 -152 -167 175 160 Magn. 0.21 0.22 0.25 0.26 0.26 0.25 S22 Angle(deg.) 160 134 112 91 73 55 S11 Angle(deg.) MITSUBISHI ELECTRIC IM3(dBc) POWER ADDED EFFICIECY PAE (%) |
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