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| TSOP344..SB1F Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP344..SB1F - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP344..SB1F is a standard IR remote control receiver series for 3 V supply voltage with excellent suppression of disturbance signals. 1 2 3 16656 Features * Photo detector and preamplifier in one package * Internal filter for PCM frequency e3 * Improved shielding against electrical field disturbance * TTL and CMOS compatibility * Output active low * Supply voltage range: 2.7 V to 5.5 V * Improved immunity against ambient light * Enhanced suppression of disturbance signals by special filtering Pinning: 1 = OUT, 2 = GND, 3 = VS Parts Table Part TSOP34430SB1F TSOP34433SB1F TSOP34436SB1F TSOP34437SB1F TSOP34438SB1F TSOP34440SB1F TSOP34456SB1F Carrier Frequency 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz Mechanical Data Block Diagram 16833 Application Circuit 3 30 k VS 17170 1 Input PIN AGC Band Pass Demodulator OUT Circuit Transmitter TSOPxxxx with TSALxxxx R1 = 100 VS C1 = 4.7 F VO +VS OUT GND C GND 2 Control Circuit GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit. Document Number 82273 Rev. 1.1, 28-Feb-05 www.vishay.com 1 TSOP344..SB1F Vishay Semiconductors Absolute Maximum Ratings Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb 85 C) t 10 s, 1mm from case (Pin 3) (Pin 3) (Pin 1) (Pin 1) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to VS + 0.3 V 10 100 - 25 to + 85 - 25 to + 85 30 260 Unit V mA V mA C C C mW C Electrical and Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 3) Supply Voltage Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Angle of half transmission distance Test condition Ev = 0, VS = 3 V Ev = 40 klx, sunlight Symbol ISD ISH VS d 2.7 35 Min 0.7 Typ. 1.2 1.3 5.5 Max 1.5 Unit mA mA V m Output Voltage Low (Pin 1) Minimum Irradiance (30 - 40 kHz) VOSL Ee min 0.2 250 0.4 mV mW/m2 Minimum Irradiance (56 kHz) Ee min 0.3 0.5 mW/m2 Minimum Irradiance (30 - 40 kHz) Ee min 0.35 0.5 mW/m2 Minimum Irradiance (56 kHz) Ee min 0.45 0.6 mW/m2 Maximum Irradiance Directivity Ee max 1/2 30 45 W/m2 deg www.vishay.com 2 Document Number 82273 Rev. 1.1, 28-Feb-05 TSOP344..SB1F Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) Ee Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) Ton ,Toff - Output Pulse Width ( ms ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 l = 950 nm, optical test signal, fig.3 Toff Ton t tpi * T * tpi w 10/fo is recommended for optimal function VO VOH VOL td1 ) Output Signal 1) 2) 16110 7/f0 < td < 15/f0 tpi-5/f0 < tpo < tpi+6/f0 tpo2 ) t 10.0 100.0 1000.010000.0 16909 Ee - Irradiance ( mW/m2 ) Figure 1. Output Function Figure 4. Output Pulse Diagram 1.0 t po - Output Pulse Width ( ms ) 1.2 E e min / E e - Rel. Responsivity 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 Output Pulse 1.0 0.8 0.6 0.4 0.2 0.0 0.7 f = f0"5% Df ( 3dB ) = f0/10 0.9 1.1 1.3 Input Burst Duration l = 950 nm, optical test signal, fig.1 10.0 100.0 1000.010000.0 mW/m2 ) 16925 16908 Ee - Irradiance ( f/f0 - Relative Frequency Figure 2. Pulse Length and Sensitivity in Dark Ambient Figure 5. Frequency Dependence of Responsivity Ee Optical Test Signal Ee min- Threshold Irradiance ( mW/m 2 ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 Ambient, l = 950 nm Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 600 ms T = 60 ms Output Signal, ( see Fig.4 ) 600 ms t 94 8134 VO VOH VOL Ton Toff t 16911 0.10 1.00 10.00 100.00 E - Ambient DC Irradiance (W/m2) Figure 3. Output Function Figure 6. Sensitivity in Bright Ambient Document Number 82273 Rev. 1.1, 28-Feb-05 www.vishay.com 3 TSOP344..SB1F Vishay Semiconductors Ee min- Threshold Irradiance ( mW/m 2 ) Ee min- Threshold Irradiance ( mW/m 2 ) 2.0 f = fo f = 10 kHz 1.0 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -30 -15 0 15 30 45 60 75 Tamb - Ambient Temperature ( C ) Sensitivity in dark ambient 1.5 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 DVsRMS - AC Voltage on DC Supply Voltage (mV) 90 16912 16918 Figure 7. Sensitivity vs. Supply Voltage Disturbances Figure 10. Sensitivity vs. Ambient Temperature E e min- Threshold Irradiance ( mW/m 2 ) 2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E - Field Strength of Disturbance ( kV/m ) S ( ) rel - Relative Spectral Sensitivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 750 850 950 1050 1150 94 8147 18998 - Wavelength ( nm ) Figure 8. Sensitivity vs. Electric Field Disturbances Figure 11. Relative Spectral Sensitivity vs. Wavelength 0.4 E e min - Sensitivity ( mW/m 2 ) Max. Envelope Duty Cycle 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 110 17185 0.3 0.2 0.1 f = 38 kHz, Ee = 2 mW/m2 0.0 10 30 50 70 90 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS - Supply Voltage ( V ) 16917 Burst Length ( number of cycles / burst ) Figure 9. Max. Envelope Duty Cycle vs. Burstlength Figure 12. Sensitivity vs. Supply Voltage www.vishay.com 4 Document Number 82273 Rev. 1.1, 28-Feb-05 TSOP344..SB1F Vishay Semiconductors * Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or Figure 15). 0 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 96 12223p2 0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance IR Signal IR Signal from fluorescent lamp with low modulation Figure 13. Directivity 0 16920 5 10 Time ( ms ) 15 20 Suitable Data Format The circuit of the TSOP344..SB1F is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: * Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). * Burst length should be 10 cycles/burst or longer. * After each burst which is between 10 cycles and 35 cycles a gap time of at least 14 cycles is necessary. * For each burst which is longer than 0.9 ms a corresponding gap time is necessary at some time in the data stream. This gap time should be at least 7 times longer than the burst. * Up to 400 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, R-2000 Code. When a disturbance signal is applied to the TSOP344..SB1F it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP344..SB1F are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signal at 38 kHz or at any other frequency Figure 14. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal 0 16921 5 10 Time ( ms ) 15 20 Figure 15. IR Signal from Fluorescent Lamp with high Modulation Document Number 82273 Rev. 1.1, 28-Feb-05 www.vishay.com 5 TSOP344..SB1F Vishay Semiconductors Package Dimensions in mm 16777 www.vishay.com 6 Document Number 82273 Rev. 1.1, 28-Feb-05 TSOP344..SB1F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82273 Rev. 1.1, 28-Feb-05 www.vishay.com 7 |
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