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| Transistors 2SB0745, 2SB0745A (2SB745, 2SB745A) Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A) (0.4) Unit: mm 6.90.1 2.50.1 (1.0) (1.5) q q q 2.00.2 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25C) Ratings -35 -55 -35 -55 -5 -200 -50 400 150 -55 ~ +150 Unit V 3.50.1 (1.0) 2.40.2 0.450.05 s Features (1.5) R 0.9 R 0.7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB0745 2SB0745A 2SB0745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.00.1 (0.85) emitter voltage 2SB0745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 3 (2.5) 2 (2.5) 1 1:Base 2:Collector 3:Emitter 1.250.05 0.550.1 M-A1 Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB0745 2SB0745A 2SB0745 2SB0745A (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -5V, IE = 2mA IC = -100mA, IB = -10mA VCE = -1V, IC = -100mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT min typ max -100 -1 Unit nA A V -35 -55 -35 -55 -5 180 700 - 0.6 - 0.7 150 150 -1 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h VCE(sat) VBE fT NV V V MHz mV FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 SJC00050AED Rank hFE Note.) The Part numbers in the Parenthesis show conventional part number. 4.10.2 4.50.1 Publication date: August 2002 1 2SB0745, 2SB0745A PC -- Ta 500 -160 -140 IC -- VCE Ta=25C -160 IC -- I B VCE=-5V Ta=25C -140 Collector power dissipation PC (mW) 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 -300A -250A -200A -150A -100A -50A Collector current IC (mA) IB=-350A -120 -100 -80 -60 -40 -20 0 -10 -12 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IB -- VBE -800 VCE=-5V Ta=25C -700 -100 -120 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE=-5V 25C Ta=75C -80 -25C VCE(sat) -- IC IC/IB=10 Base current IB (A) -600 -500 -400 -300 -200 -100 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Collector current IC (mA) -60 -40 - 0.3 25C - 0.1 Ta=75C -20 -25C - 0.03 - 0.01 - 0.1 - 0.3 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -1 -3 -10 -30 -100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-5V 500 450 500 Ta=75C 400 25C fT -- I E Collector output capacitance Cob (pF) VCB=-5V Ta=25C 20 18 16 14 12 10 8 6 4 2 0 - 0.1 - 0.3 Cob -- VCB IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 10 30 100 400 350 300 250 200 150 100 50 300 -25C 200 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 SJC00050AED 2SB0745, 2SB0745A NV -- VCE 160 140 IC=-1mA GV=80dB Function=FLAT 300 IC=-1mA GV=80dB Function=RIAA NV -- VCE 160 140 NV -- IC VCE=-10V GV=80dB Function=FLAT Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=100k 100 80 60 40 4.7k 20 0 -1 22k Noise voltage NV (mV) 240 Rg=100k 180 120 100 80 60 22k 40 4.7k 20 0 - 0.01 Rg=100k 120 22k 60 4.7k -3 -10 -30 -100 0 -1 -3 -10 -30 -100 - 0.03 - 0.1 - 0.3 -1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV -- IC 300 VCE=-10V GV=80dB Function=RIAA 160 140 NV -- Rg 300 VCE=-10V GV=80dB Function=FLAT NV -- Rg VCE=-10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=-1mA 40 - 0.5mA 20 0 - 0.1mA 180 Noise voltage NV (mV) 240 240 180 120 Rg=100k 22k 4.7k 120 60 60 - 0.5mA 0 IC=-2mA - 0.1mA 10 30 100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 1 3 10 30 100 1 3 Collector current IC (mA) Signal source resistance Rg (k) Signal source resistance Rg (k) SJC00050AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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