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| 2SK1280 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 500V 0,5 18A 150W > Outline Drawing > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 500 18 72 18 20 150 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V Tch=25C VGS=0V VGS=20V VDS=0V ID=9A VGS=10V ID=9A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=18A VGS=10V RGS=25 IF=IDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 500 2,1 Typ. 3,0 10 10 0,35 15 2400 300 150 35 150 450 180 0,85 150 Max. 4,0 500 100 0,5 3600 450 220 50 220 650 270 1,6 200 Unit V V A nA S pF pF pF ns ns ns ns V ns 8 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 0,83 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 500V 0,5 2SK1280 F-V Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 18A 150W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(ON) [] 44 gfs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9 VDS [V] Qg [nC] VSD [V] Allowable Power Dissipation vs. TC Safe operation area Zth(ch-c) [K/W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] VDS [V] t [s] This specification is subject to change without notice! |
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