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AM1011-500
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
.P .10: .SI .EMI .REFRACTORY/ .LOW .I .CHARACTERI
DESCRIPTION
OUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 1 LOAD VSWR CAPABILITY @ 10S., 1% DUTY XPACTM HERMETIC METAL/CERAMIC PACKAGE T TER SITE BALLASTED OVERLAY GEOMETRY GOLD METALLIZATION THERMAL RESISTANCE NTERNAL INPUT/OUTPUT MATCHING ZED UNDER 32S.,2% DUTY CYCLE PULSE CONDITIONS
.400 x .600 2L FL (M198) hermetically sealed ORDER CODE AM1011-500 BRANDING 1011-500
PIN CONNECTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-500 is supplied in the SIXPACTM Hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
1,360 27 55 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.11 C/W
*Applies only to rated RF amplifier operation
AM1011-500
ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC
Symbo l T est Con ditio ns Value Min. Typ . Max. Un it
BVCBO BVEBO BVCES ICES hFE
IC = 50 mA IE = 30 mA IC = 50 mA VBE = 0 V VCE = 5 V
IE = 0 mA IC = 0 mA VBE = 0 V VCE = 50 V IC = 1.0 A
70 3.0 70 -- 10
-- -- -- -- --
-- -- -- 40 200
V V V mA --
DYNAMIC
Symbo l Test Con dition s Value Min . Typ . Max. Unit
POUT hc GP
f = 1090 MHz f = 1090 MHz f = 1090 MHz
PIN = 70 W POUT = 500 W POUT = 500 W
VCC = 50 V VCC = 50 V VCC = 50 V
500 40 8.5
-- -- --
-- -- --
W % dB
Load VSWR = 10:1, 10S, 1% Duty POUT = 500 W Peak Mismatch F = 1090MHz VSWR = 5:1, 32S, 2% Duty VCC = 50 V Note: Pul se Width = 32Sec, D uty Cycle = 2%
No Degradation in Output Power
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POUT
POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POUT
C
C
* Pulse Burst conditions: 128 Sec train, 0.5 Sec on, 0.5 Sec off; with a period of 6.4 msec.
AM1011-500
IMPEDANCE DATA FREQ. 1030 MHz 1090 MHz 1120 MHz PIN = 70W VCC = 50V ZIN() 4.35 + j 6.97 4.38 + j 2.75 4.69 + j 2.95 ZCL() 1.38 - j 4.08 .874 - j 3.55 1.3 - j 4.97
TEST CIRCUIT
AM1011-500
PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0198 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

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