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PNP Silicon AF Transistor
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary type: BC 368 (NPN)
q 2 1 3
BC 369
Type BC 369
Marking -
Ordering Code C62702-C748
Pin Configuration 1 2 3 E C B
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 90 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - case3) Rth JA Rth JC

Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 20 25 5 1 2 100 200 0.8 (1) 150 - 65 ... + 150
Unit V
A mA W C
156 75
K/W
1) 2)
3)
For detailed information see chapter Package Outlines. If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
Semiconductor Group
1
5.91
BC 369
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 1 A Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 C Emitter cutoff current VEB = 5 V DC current gain IC = 5 mA; VCE = 10 V IC = 500 mA; VCE = 1 V1) IC = 1 A; VCE = 1 V1) Collector-emitter saturation voltage1) IC = 1 A; IB = 100 mA Base-emitter voltage1) IC = 5 mA; VCE = 10 V IC = 1 A; VCE = 1 V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT - 100 - MHz V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE 50 85 60 VCEsat VBE - - 0.6 - - 1 - - 160 - - - 375 - 0.5 V - - - - 100 10 100 nA
A
Values typ. max.
Unit
20 25 5
- - -
- - -
V
nA -
1)
Pulse test: t 300 s, D 2 %.
Semiconductor Group
2
BC 369
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA) VCB = 25 V
Permissible pulse load RthJA = f (tp)
DC current gain hFE = f (IC) VCE = 1 V, TA = 25 C
Semiconductor Group
3
BC 369
Collector current IC = f (VBE) VCE = 1 V, TA = 25 C
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10, TA = 25 C
Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz
Semiconductor Group
4

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