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| MITSUBISHI IGBT MODULES CM75E3U-24F HIGH POWER SWITCHING USE CM75E3U-24F IC ..................................................................... 75A VCES ......................................................... 1200V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 94 7 17 80 0.25 23 23 2-6.5 MOUNTING HOLES 4 E2 G2 24 C2 E1 E2 C1 4 11 13 CM 48 24 27 24 12 3-M5 NUTS 12mm deep 13.5 G1 E1 1MAX 7.5 RTC C2E1 E2 C1 30 -0.5 +1 LABEL 21.2 CIRCUIT DIAGRAM Mar.2002 E2 G2 16 2.5 25 2.5 16 TAB #110. t=0.5 MITSUBISHI IGBT MODULES CM75E3U-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) VRRM IF IFM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Repetitive peak reverse voltage Forward current Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Clamp diode part TC = 25C Pulse Conditions Ratings 1200 20 75 150 75 150 450 1200 75 150 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W V A A C C V N*m N*m g (Note 2) (Note 2) Clamp diode part Clamp diode part (Note 2) Charged part to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) RG Rth(j-c)Q Rth(j-c)R Rth(j-c')Q VFM trr Qrr Rth(j-c)R Rth(c-f) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage External gate resistance Thermal resistance*1 Thermal resistance Forward voltage drop Reverse recovery time Reverse recovery charge Thermal resistance*1 Contact thermal resistance Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25C IC = 75A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE1 = VGE2 = 15V RG = 4.2, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V IGBT part FWDi part Tc measured point is just under the chips IF = 75A, Clamp diode part IF = 75A VCC = 600V, VGE1 = VGE2 = 15V RG = 4.2, Inductive load switching operation, Clamp diode part Clamp diode part Case to fin, Thermal compound applied*2 (1/2 module) Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.2 -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 1.8 1.9 -- -- -- 825 -- -- -- -- -- 3.1 -- -- -- -- -- -- -- 3.1 -- 0.07 Max. 1 7 20 2.4 -- 29 1.3 0.75 -- 100 50 400 300 150 -- 3.2 42 0.28 0.47 0.22*3 3.2 150 -- 0.47 -- Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W V ns C C/W C/W Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar.2002 MITSUBISHI IGBT MODULES CM75E3U-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Tj=25C 125 100 75 8.5 50 25 0 8 VGE=20V 9.5 9 15 11 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 50 100 150 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj = 25C FREE-WHEEL DIODE AND CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 Tj = 25C 4 EMITTER CURRENT IE (A) 5 3 2 102 7 5 3 2 3 IC = 150A 2 IC = 75A IC = 30A 1 101 7 5 3 2 0 6 8 10 12 14 16 18 20 100 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 tf td(off) 101 7 5 3 2 SWITCHING TIMES (ns) 3 2 Cies 102 7 5 3 2 td(on) Conditions: VCC = 600V VGE = 15V RG = 4.2 Tj = 125C Inductive load 2 3 5 7 101 2 3 tr 100 7 5 3 2 101 7 5 3 2 Cres VGE = 0V Coes 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 5 7 102 COLLECTOR CURRENT IC (A) Mar.2002 MITSUBISHI IGBT MODULES CM75E3U-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF CLAMP DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part & CLAMP DIODE part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 102 7 5 3 2 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: Per unit base = Rth(j-c) = 0.28C/W 5 FWDi part: Per unit base = Rth(j-c) = 0.47C/W 3 CLAMP Di part: Per unit base = Rth(j-c) = 0.47C/W 2 7 5 3 2 7 5 3 2 7 5 3 2 Irr trr 100 3 2 101 7 5 3 2 Conditions: VCC = 600V VGE = 15V RG = 4.2 Tj = 25C Inductive load 2 3 5 7 101 2 3 5 7 102 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 Single Pulse TC = 25C 100 0 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 75A VCC = 400V VCC = 600V 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Mar.2002 |
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