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NE/SA5521 LVDT signal conditioner
Product data Supersedes data of 1994 Aug 31 2002 Nov 05
Philips Semiconductors
Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
DESCRIPTION
The NE/SA5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the primary of the LVDT/RVDT, a synchronous demodulator to convert the LVDT/RVDT output amplitude and phase to position information, and an output amplifier to provide amplification and filtering of the demodulated signal.
PIN CONFIGURATIONS
N Package
AMP OUT 1 +IN 2 -IN 3 LVDT IN 4 DEMOD OUT 5 SYNC 6 18 V+ 17 C T 16 V REF 15 FEEDBACK 14 OSC 13 OSC 12 V REF/2 11 R T 10 N.C. TOP VIEW
FEATURES
GND 7 N.C. 8 N.C. 9
* Low distortion * Single supply 5 V to 20 V, or dual supply 2.5 V to 10 V * Oscillator frequency 1 kHz to 20 kHz * Capable of ratiometric operation * Low power consumption (182 mV typ)
APPLICATIONS
D1 Package
AMP OUT 1 +IN 2 -IN 3 LVDT IN 4 DEMOD OUT 5 SYNC 6 GND 7 N.C. 8 TOP VIEW NOTE: 1. SOL -- released in large SO package only. 16 V+ 15 CT 14 V REF 13 FEEDBACK 12 OSC 11 OSC 10 VREF/2 9 RT
* LVDT signal conditioning * RVDT signal conditioning * LPDT signal conditioning * Bridge circuits
SL00326
Figure 1. Pin configurations
ORDERING INFORMATION
ORDER CODE NE5521D NE5521N SA5521D SA5521N DESCRIPTION 16-Pin Small Outline Large (SOL) Package 18-Pin Plastic Dual In-Line Package (DIP) 16-Pin Small Outline Large (SOL) Package 18-Pin Plastic Dual In-Line Package (DIP) TEMPERATURE RANGE 0 C to +70 C 0 C to +70 C -40 C to +85 C -40 C to +85 C DWG # SOT162-1 SOT102-4 SOT162-1 SOT102-4
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC Tamb Supply voltage Split supply voltage Operating temperature range NE5521 SA5521 Storage temperature range Power dissipation1 PARAMETER RATING +20 10 0 to 70 -40 to +85 -65 to +125 910 UNIT V V C C C mW
Tstg PD
NOTES: 1. For derating, see typical power dissipation versus load curves (Figure 3).
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
BLOCK DIAGRAM
VREF 16 15 10 k 10 k 17 CT RT V+ 11 10 k 18 10 k 3 - 2 1 + SYNCHRONOUS DEMODULATOR AUX AMP 4 6 7 OSC SINE CONV - + - + 14 12 OSC VREF/2 GND/V- LVDT IN SYNC 13 OSC FEEDBACK
-IN +IN AMP OUT
5 DEMOD OUT NOTE: Pin numbers are for N packages.
SL00327
Figure 2. Block diagram.
PIN DEFINITIONS FOR D AND N PACKAGES
PIN NO. D 1 2 3 4 5 6 7 8 --9 10 N 1 2 3 4 5 6 7 8 9 10 11 12 SYMBOL Amp Out +IN -IN LVDT IN DEMOD OUT SYNC GND NC NC NC RT VREF/2 Auxiliary Amplifier Out. Auxiliary Amplifier non-inverting input. Auxiliary Amplifier inverting input. Input to Synchronous Demodulator from the LVDT/RVDT secondary. Pulsating DC output from the Synchronous Demodulator output. This voltage should be filtered before use. Synchronizing input for the Synchronizing Demodulator. This input should be connected to the OSC or OSC output. Sync is referenced to VREF/2. Device return. Should be connected to system ground or to the negative supply. No internal connection. No internal connection. No internal connection. A temperature stable 18 k resistor should be connected between this pin and Pin 7. A high impedance source of one half the potential applied to VREF. The LVDT/RVDT secondary return should be to this point. A bypass capacitor with low impedance at the oscillator frequency should also be connected between this pin and ground. Oscillator sine wave output that is 180 out of phase with the OSC signal. The LVDT/RVDT primary is usually connected between OSC and OSC pins. Oscillator sine wave output. The LVDT/RVDT primaries are usually connected between OSC and OSC pins. Usually connected to the OSC output for unity gain, a resistor between this pin and OSC, and one between this pin and ground can provide for a change in the oscillator output pin amplitudes. Reference voltage input for the oscillator and sine converter. This voltage MUST be stable and must not exceed +V supply voltage. Oscillator frequency-determining capacitor. The capacitor connected between this pin and ground should be a temperature-stable type. Positive supply connection. DEFINITION
11 12 13 14 15 16
13 14 15 16 17 18
OSC OSC FEEDBACK VREF CT +V
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
DC ELECTRICAL CHARACTERISTICS
V+ = VREF = 10 V; Tamb = 0 C to 70 C for NE5521, Tamb = -40 C to 85 C for SA5521; Frequency = 1 kHz, unless otherwise noted. SYMBOL VCC IREF VREF PD PARAMETER Supply current Reference current Reference voltage range Power dissipation 5 182 TEST CONDITIONS NE5521 Min Typ 12.9 5.3 Max 20 8 V+ 280 5 182 Min SA5521 Typ 12.9 5.3 Max 18 8 V+ 260 UNIT mA mA V mW
Oscillator Section
Oscillator output THD Sine wave distortion Initial amplitude error Tempco of amplitude Init. accuracy of oscillator freq. Temperature coeff. of frequency1 Voltage coeff. of frequency Min OSC (OSC) Load2 300 Tamb = 25 C RL = 10 k No load Tamb = 25 C V REF 8.8 1.5 0.4 0.005 0.9 0.05 2.5 170 0.05 V REF 2 1.4 5 -600 -234 0.1 0.5 -600 100 AV = 1 RL = 10 k Tamb = 25 C 7 -210 10 385 1.3 1.6 8.2 42 100 7 50 100 1 5 -500 0.1 300 3 0.01 5 V REF 8.8 1.5 0.4 0.005 0.9 0.05 3.3 170 0.05 V REF 2 1.4 5 -500 -234 0.1 0.5 -210 10 385 1.3 1.6 8.2 42 100 50 1 5 0.1 3 0.01 5 VRMS % % %/C % %/C %/V(VREF) %FS VP-P 5 25 mV V/5C nA %
Demodulator Section
r Linearity error Maximum demodulator input VOS TCVOS IBIAS Demodulator offset voltage Demodulator offset voltage drift Demodulator input current VR/2 accuracy 5 VP-P input
5 25
Auxiliary Output Amplifier
VOS IBIAS IOS AV SR GBW Input offset voltage Input bias current Input offset current Gain Slew rate Unity gain bandwidth product Output voltage swing Output short circuit current to ground or to VCC mV nA nA V/mV V/s MHz V mA
NOTES: 1. This is temperature coefficient of frequency for the device only. It is assumed that CT and RT are fixed in value and CT leakage is fixed over the operating temperature range. 2. Minimum load impedance for which distortion is guaranteed to be less than 5%.
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
DEFINITION OF TERMS
TERM Oscillator output Sine wave distortion DEFINITION RMS value of the AC voltage at the oscillator output pin. This output is referenced to VREF/2 and is a function of VREF. The Total Harmonic Distortion (THD) of the oscillator output with no load. This is not a critical specification in LVDT/RVDT systems. This figure could be 15% or more without affecting system performance. A measure of the interchangeability of NE/SA5521 parts, not a characteristic of any one part. It is the degree to which the oscillator output of a number of NE/SA5521 samples will vary from the median of that sample. Another measure of the interchangeability of individual NE/SA5521 parts. This is the degree to which the oscillator frequency of a number of NE/SA5521 samples will vary from the median of that sample with a given timing capacitor. A measure of how the oscillator amplitude varies with ambient temperature as that temperature deviates from a 25 C ambient. A measure of how the oscillator frequency varies with ambient temperature as that temperature deviates from a 25 C ambient. The degree to which the oscillator frequency will vary as the reference voltage (VREF) deviates from +10 V. Minimum load impedance for which distortion is guaranteed to be less than 5%. The degree to which the DC output of the demodulator/amplifier combination matches a change in the AC signal at the demodulator input. It is measured as the worst case nonlinearity from a straight line drawn between positive and negative fullscale end points. The maximum signal that can be applied to the demodulator input without exceeding the specified linearity error.
Initial amplitude error
Initial accuracy of oscillator frequency
Tempco of oscillator amplitude Tempco of oscillator frequency Voltage coefficient of oscillator frequency Min OSC (OSC) load Linearity error
Maximum demodulator input
APPLICATION INFORMATION
OSC frequency + V REF * 1.3V V REF (R T ) 1.5k) C T
2000 DEVICE POWER DISSIPATION (mW) 1000 800 700 600 500 400 300 200 100 0.2 10V 5V 0.4 0.6 0.8 12 15V VREF = V+ = 20V
PD(max) (N PACKAGE) AT Tamb = +70 C, Tj(max) = +150 C PD(max) (SO PACKAGE) AT Tamb = +85 C, Tj(max) = +150 C
3
OSC-OSC LOAD (k)
SL00328
Figure 3. Device power dissipation versus OSC - OSC Load at +25 C
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
16
16 14 ICC
8 12 I(mA) fOSC (%) 0 10 8 -8 6 -16 5 8 10 12 14 16 18 20 VCC = VREF (V) 4 -55 IREF
-40
0 Tamb (C)
25
70 85 125
SL00329
SL00331
Figure 4. Oscillator frequency variation with voltage (Normalized to VREF = VCC = 10 V) Tamb = +25 C
Figure 6. IREF and ICC versus Temperature (VREF = VCC = 10 V)
20
15 I(mA)
ICC
10
IREF
5
0
5
10
15
20
25
VCC = VREF (V)
SL00330
Figure 5. IREF and ICC versus voltage (Tamb = +25 C)
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
DIP18: plastic dual in-line package; 18 leads (300 mil); long body
SOT102-4
2002 Nov 05
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
SO16: plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
2002 Nov 05
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
REVISION HISTORY
Rev _2 Date 20021105 Description Product data; second version (9397 750 10666). Supersedes NE/SA/SE5521 of 1994 Aug 31. Engineering Change Notice 853-0043 29139 (date: 20021101). Modifications:
* Delete SE5521 and ceramic package options.
_1 19940831 Product data; initial version. Engineering Change Notice 853-0043 13721 (date: 19940831).
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Philips Semiconductors
Product data
LVDT signal conditioner
NE/SA5521
Data sheet status
Level
I
Data sheet status [1]
Objective data
Product status [2] [3]
Development
Definitions
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data
Qualification
III
Product data
Production
[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products--including circuits, standard cells, and/or software--described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Date of release: 11-02
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Document order number:
9397 750 10666
Philips Semiconductors
2002 Nov 05 10

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