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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII * Switching Regulators * PWM Inverters and Motor Controls * Solenoid and Relay Drivers * Deflection Circuits Specification Features -- High Temperature Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents THERMAL CHARACTERISTICS MAXIMUM RATINGS (1) Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Emitter Current -- Continuous -- Peak (2) Base Current -- Continuous -- Peak (2) Collector Current -- Continuous -- Peak (2) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating VCEO(sus) VCEX(sus) Symbol Symbol TJ, Tstg VCEV RJC VEB IC ICM IE IEM IB IBM PD TL - 65 to + 200 Value Max 275 175 100 1.0 850 450 400 1.0 9.0 25 35 10 20 15 30 CASE 1-07 TO-204AA (TO-3) Watts W/_C (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated switch-mode applications such as: Designer's and SWITCHMODE are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Switchmode Series NPN Silicon Power Transistors Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA REV 4 15 AMPERE NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 WATTS 2N6547 Order this document by 2N6547/D _C/W Unit Unit Adc Adc Adc Vdc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6547 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1) Fall Time Storage Time Fall Time Storage Time Inductive Load, Clamped Fall Time Storage Time Rise Time Delay Time Resistive Load Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100_C Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 15 Adc, IB = 3.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) DC Current Gain (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 8.0 A, Vclamp = Rated VCEX, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 100 mA, IB = 0) (IC = 15 A, Vclamp = Rated VCEO = 100 V, TC = 100_C) Characteristic *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Second Breakdown Collector Current with base forward biased t = 1.0 s (non-repetitive) (VCE = 100 Vdc) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) 2 (IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 2.0 A, VBE(off) = 5.0 Vdc, TC = 25_C) (IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 2.0 A, VBE(off) = 5.0 Vdc, TC = 100_C) (VCC = 250 V, IC = 10 A, IB1 = IB2 = 2.0 A, tp = 100 s, 2.0%) Duty Cycle v 2N6546 2N6547 2N6546 2N6547 2N6546 2N6547 Motorola Bipolar Power Transistor Device Data VCEO(sus) VCEX(sus) VCE(sat) VBE(sat) Symbol IEBO ICER ICEV Cob hFE IS/b fT td ts ts ts tr tf tf tf Min 125 350 450 200 300 300 400 6.0 12 6.0 0.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typical 0.09 2.0 0.05 Max 500 1.5 5.0 0.7 4.0 1.0 1.6 1.6 1.5 5.0 2.5 1.0 5.0 1.0 4.0 28 60 30 -- -- -- -- -- -- -- mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc Vdc pF s s s s s s s s -- 2N6547 TYPICAL ELECTRICAL CHARACTERISTICS 100 70 hFE, DC CURRENT GAIN 50 30 20 - 55C 10 7.0 5.0 0.2 0.3 VCE = 2.0 V VCE = 10 V 0.5 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 25C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 1.2 IC = 2.0 A 5.0 A 10 A 15 A 0.8 0.4 0 0.07 0.1 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IB, COLLECTOR CURRENT (AMP) 5.0 7.0 Figure 1. DC Current Gain Figure 2. Collector Saturation Region 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.2 0.3 *VC for VCE(sat) *APPLIES FOR IC/IB v hFE @ VCE + 2.0 V 3 25C to 150C VBE(sat) @ IC/IB = 5.0 VBE(on) @ VCE = 2.0 V - 55C to 25C 25C to 150C VB for VBE - 55C to 25C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VCE(sat) @ IC/IB = 5 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. "On" Voltages Figure 4. Temperature Coefficients 3.0 k 2.0 k tr 1.0 k 700 500 300 200 td @ VBE(off) = 5.0 V 100 70 50 30 0.02 0.05 VCC = 250 V IC/IB = 5.0 TJ = 25C 10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 ts t, TIME (ns) tf VCC = 250 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 5.0 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (AMP) 10 20 100 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 5. Turn-On Time Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 3 2N6547 MAXIMUM RATED SAFE OPERATING AREAS 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 dc 5.0 ms 1.0 ms 100 s 10 ms IC, COLLECTOR CURRENT (AMP) 20 TURN OFF LOAD LINE BOUNDARY FOR 2N6547. FOR 2N6546, VCEO AND VCEX ARE 100 VOLTS LESS. 16 12 VCEX(sus) 8.0 8.0 V TC = 25C BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 4.0 0.02 2N6546 2N6547 0.01 CURVES APPLY BELOW RATED VCEO 0.005 50 70 100 200 300 400 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(off) 5 V TC 100C v v VCEO(sus) VCEX(sus) 0 0 400 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 160 TC, CASE TEMPERATURE (C) 200 Figure 9. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 P(pk) ZJC (t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 10. Thermal Response 4 Motorola Bipolar Power Transistor Device Data 2N6547 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N6547 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6547/D* 2N6547/D |
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