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| Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES * Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Isolated package BYV118F, BYV118X series SYMBOL QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 10 A VF 0.6 V a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118F series is supplied in the SOT186 package. The BYV118X series is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 123 123 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118FBYV118XVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths 97 C square wave; = 0.5; Ths 107 C square wave; = 0.5; Ths 107 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 35 35 35 35 35 MAX. 40 40 40 40 40 10 10 100 110 1 150 175 45 45 45 45 45 UNIT V V V A A A A A C C IRRM Tj Tstg May 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS BYV118F, BYV118X series MIN. - TYP. MAX. UNIT 1500 V SOT186 package; R.H. 65%; clean and dustfree Visol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree Capacitance from pin 2 to external heatsink f = 1 MHz - - 2500 V Cisol - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes (with heatsink compound) in free air MIN. TYP. MAX. UNIT 55 6.5 5.5 K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 5 A; Tj = 125C IF = 10 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.52 0.72 0.06 6 155 0.6 0.87 0.5 15 V V mA mA pF May 1998 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier BYV118F, BYV118X series 5 4 3 2 Forward dissipation, PF (W) PBYR1045CTD Vo = 0.43 V Rs = 0.034 Ohms 0.5 0.2 0.1 Ths(max) / C 117.5 D = 1.0 124 130.5 100 Reverse current, IR (mA) PBYR645CT 10 125 C 100 C 1 I tp D= tp T t 75 C 50 C Tj = 25 C 137 143.5 1 T 0.1 0 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 150 8 0.01 0 25 Reverse voltage, VR (V) 50 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. Forward dissipation, PF (W) PBYR1045CTD Vo = 0.43 V Rs = 0.034 Ohms 4 2.2 3 2 1 0 2.8 4 1.9 130.5 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 5 Ths(max) / C a = 1.57 117.5 124 Cd / pF 1000 PBYR645CT 100 137 143.5 150 5 10 0 1 2 3 4 Average forward current, IF(AV) (A) 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). BYV118 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C. 20 Forward current, IF (A) Tj = 25 C Tj = 125 C 10 Transient thermal impedance, Zth j-hs (K/W) 15 1 typ 10 max 5 0.1 P D tp D= tp T t T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYV118X Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; per diode; Zth j-hs = f(tp). May 1998 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV118F, BYV118X series 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3 0.55 max Fig.7. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 BYV118F, BYV118X series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.8. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV118F, BYV118X series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 6 Rev 1.100 |
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