View FDR856P_332467.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

March 1998
FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
Features
- 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 V RDS(ON) =0.040 @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8. High density cell design for extremely low RDS(ON).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D S
S
6 85
P
G
5 6
4 3 2 1
pin 1
SuperSOT TM-8
D
D
D
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
TA = 25oC unless other wise noted FDR856P -30 20
(Note 1a)
Units V V A
Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
-5.1 -50 1.8 1 0.9 -55 to 150
W
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
(c) 1998 Fairchild Semiconductor Corporation
FDR856P Rev.B
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Conditions VGS = 0 V, I D = -250 A ID = -250 A, Referenced to 25 oC VDS = -24 V, VGS = 0 V TJ = 55C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
Min -30
Typ
Max
Units V
OFF CHARACTERISTICS
BVDSS/TJ
IDSS
-15 -1 -10 -100 -100
mV /oC A A nA nA
VGS = -20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25 C VGS = -10 V, I D = -6.3 A TJ =125C VGS = -4.5 V, I D = -5 A
o
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance
-1
-1.5 3 0.022 0.03 0.033
-3
V mV /oC
VGS(th)/TJ
RDS(ON)
0.025 0.042 0.04
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VGS = -10 V, VDS = -5 V VDS = -10 V, I D = -6.3 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz
-50 15 1370 740 220
A S pF pF pF 14 19 100 160 31 ns ns ns ns nC nC nC -1.3 A V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = -15 V, I D= -1 A VGS = -10 V , RG = 6
7 12 80 130
VDS = -15 V, I D = -6.3 A, VGS = -10 V
22 3.8 8.7
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-0.73
-1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 50OC/W on a 0.5 in2 pad of 2oz copper.
b. 105OC/W on a 0.02 in2 pad of 2oz copper.
c. 125OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDR856P Rev.B
Typical Electrical Characteristics
30 - ID , DRAIN-SOURCE CURRENT (A) 25 20 15 2.5
VGS = -10V
R DS(on) , NORMALIZED
-5.5V -4.5V -4.0V -3.5V
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5 V
2
-4.0V -4.5V
1.5
-5.0V -5.5V -7.0V
-3.0V
10 5 0 0 0.5 1 1.5 2 2.5 3 -VDS , DRAIN-SOURCE VOLTAGE (V)
1
-10V
-2.5V
0.5
0
5
10 15 20 - ID , DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 DRAIN-SOURCE ON-RESISTANCE
0.125
I D = -6.3A
1.4
VGS = -10V
R DS(ON) , ON-RESISTANCE (OHM)
ID = -3A
0.1
R DS(ON), NORMALIZED
1.2
0.075
1
0.05
TJ = 125C
0.025
0.8
TJ = 25C
0 2 4 6 8 10
0.6 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J
125
150
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation Temperature.
with
Figure 4 . On Resistance Variation with Gate-to-Source Voltage.
-I S , REVERSE DRAIN CURRENT (A)
30
40
VDS = -5V
- I D , DRAIN CURRENT (A) 25
T = -55C J
25C 125C
VGS = 0V
5 1 0.1 0.01 0.001 0.0001
TJ = 125C 25C -55C
20 15 10 5 0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS , GATE TO SOURCE VOLTAGE (V)
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5 . Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature.
FDR856P Rev.B
Typical Electrical Characteristics (continued)
-VGS , GATE-SOURCE VOLTAGE (V) 10 4000
I D = -6.3A
8
VDS = -5V
2000 CAPACITANCE (pF)
-15V
6
-10V
C iss
1000
Coss
4
500
2
200
f = 1 MHz VGS = 0 V
0.3 1 3 7
C rss
0
0
8
16
24
32
40
100 0.1
15
30
Q g , GATE CHARGE (nC)
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
50
IT LIM N) (O DS R
Figure 8. Capacitance Characteristics.
80 -I D , DRAIN CURRENT (A)
100 us 1m s
10
s
POWER (W)
40
5
10m
SINGLE PULSE R JA= 135C/W TA = 25C
0m
30
0.5
0.05 0.01 0.1
VGS = -10V SINGLE PULSE R JA = 135C/W T A = 25C A
0.2 0.5 1 2
1s 10s DC
s
20
10
5
10
20
50
0 0.0001
0.001
-VDS , DRAIN-SOURCE VOLTAGE (V)
0.01 0.1 1 SINGLE PULSE TIME (SEC)
10
100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.0001
D = 0.5
0.2 0.1 0.05 0.02 0.01 Single Pulse
R JA (t) = r(t) * R JA R JA = 135 C/W
P(pk)
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.01 0.1 t 1, TIME (sec) 1 10 100 300
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDR856P Rev.B
SuperSOTTM-8 Tape and Reel Data and Package Dimensions
SSOT-8 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d.
F63TNR Label Anti static Cover Tape
Static Dissi pat ive Emboss ed Carrier Tape
F852 831N F852 831N F852 831N F852 831N F852 831N
Pin 1
SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard
(no f l ow c ode )
D84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980
TNR 3,000 13" D ia 343x64x343 6,000 0.0416 0.5615
SSOT-8 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons
F63TNR Label
F63TNR Label
F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label
LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC:
SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets
August 1999, Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0
T E1 P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SSOT-8 (12mm)
A0
4.47 +/-0.10
B0
5.00 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 mi n
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.37 +/-0.10
T
0.280 +/-0.150
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Si de or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SSOT-8 Reel Configuration: Figur e 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
(c) 1998 Fairchild Semiconductor Corporation
July 1999, Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SuperSOTTM-8 (FS PKG Code 34, 35)
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0416
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D

▲Up To Search▲

Price & Availability of FDR856P

	To Download FDR856P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .