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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4240V 40 V low VCEsat NPN transistor
Product specification 2003 Jan 30
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency leading to reduced heat generation * Reduced printed-circuit board area requirements. APPLICATIONS * Power management: - DC-DC converter - Supply line switching - Battery charger - LCD back lighting. * Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relay, buzzers and motors). DESCRIPTION NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V.
1 2 3
PBSS4240V
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 2 2 <190 UNIT V A A m
handbook, halfpage
6
5
4 1, 2, 5, 6 3 4
MARKING TYPE NUMBER PBSS4240V MARKING CODE 42
Top view
MAM444
Fig.1 Simplified outline (SOT666) and symbol.
2003 Jan 30
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRP ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation Tamb 25 C; note 3 Tamb 25 C; note 4 Tamb 25 C; note 1 Tamb 25 C; notes 2 and 3 Tstg Tj Tamb Notes 1. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 2. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector note 1 note 2 - - - - - - - - - - - - -65 - -65 MIN.
PBSS4240V
MAX. 40 40 5 2 2 3 300 1 300 500 900 1.2 +150 150 +150 V V V A A A
UNIT
mA A mW mW mW W C C C
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 note 3 notes 1 and 4 Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 3. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering The only recommended soldering method is reflow soldering. CONDITIONS VALUE 410 215 140 110 UNIT K/W K/W K/W K/W
2003 Jan 30
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tamb = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 IC = 2 A; IB = 200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA; note 1 IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. - - - - 300 300 200 75 - - - - - - - 150 -
PBSS4240V
TYP. - - - - - - - - 50 70 150 300 150 - - - -
MAX. 100 50 100 100 - 900 - - 75 100 190 400 <190 1.2 1.1 - 10
UNIT nA A nA nA
mV mV mV mV m V V MHz pF
2003 Jan 30
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240V
handbook, halfpage
800
MHC471
handbook, halfpage
1.2
MHC472
hFE
(1)
VBE (V)
(1)
600 0.8
(2)
(2)
400
(3)
(3)
0.4
200
0 10-1
1
10
102
103 104 IC (mA)
0 10-1
1
10
102
103 104 IC (mA)
VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV)
MHC473
handbook, halfpage
1.2
MHC474
VBEsat (V) 1
(1)
0.8 102
(1) (2) (3) (3) (2)
0.6
0.4
10 10-1
1
10
102
103 104 IC (mA)
0.2 10-1
1
10
102
103 104 IC (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2003 Jan 30
5
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240V
handbook, halfpage
2
MHC475
IC (A)
(1) (2) (3) (4) (5) (6) (7) (8) (9)
103 handbook, halfpage RCEsat () 102
MHC476
1.6
1.2
10
0.8
(10)
1 0.4
(1) (3) (2)
0 0 Tamb = 25 C. (1) (2) (3) (4) IB = 3 mA. IB = 2.7 mA. IB = 2.4 mA. IB = 2.1 mA. (5) (6) (7) (8) IB = 1.8 mA. IB = 1.5 mA. IB = 1.2 mA. IB = 0.9 mA. (9) IB = 0.6 mA. (10) IB = 0.3 mA. 0.4 0.8 1.2 1.6 2 VCE (V)
10-1 10-1
1
10
102
103 104 IC (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance as a function of collector current; typical values.
2003 Jan 30
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PBSS4240V
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2003 Jan 30
7
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PBSS4240V
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jan 30
8
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
NOTES
PBSS4240V
2003 Jan 30
9
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
NOTES
PBSS4240V
2003 Jan 30
10
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
NOTES
PBSS4240V
2003 Jan 30
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2003
Jan 30
Document order number:
9397 750 10782

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