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Advance Product Information
December 9, 2004
19 - 38GHz Medium Power Amplifier
Key Features
* * * * * * *
TGA4036
Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA (210mA @ P1dB) 0.25 um 3MI pHEMT Technology Chip Dimensions 1.69 x 0.75 x 0.10 mm (0.066 x 0.030 x 0.004 in)
Product Description
The TriQuint TGA4036 is a compact Medium Power Amplifier MMIC for Wide-band applications. The part is designed using TriQuint's proven standard 0.25 um power pHEMT production process. The TGA4036 provides a nominal 20 dB Gain from 19-36 GHz, with Saturated Output Power of 22 dBm.
S-parameters (dB)
Primary Applications
* * * Point-to-Point Radio Point-to-Multipoint Communications Instrumentation
Measured Fixtured Data
Bias Conditions: Vd = 5 V, Id = 160 mA
25 20 15 10 5 0 -5 -10 -15 -20 -25 Frequency (GHz)
The part is ideally suited for low cost emerging markets such as Point-to-Point Radio, Point-toMulti Point Communications, and Instrumentation. The TGA4036 is 100% DC and RF tested onwafer to ensure performance compliance. Evaluation boards are available.
GAIN
ORL IRL
18 20 22 24 26 28 30 32 34 36 38 40
25 24 23 Power (dBm) 22 21 20 19 18 17 16 15 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice
1
Psat P1dB
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
TGA4036
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
PARAMETER
VALUE
7V -1 TO +0.5 V 400 mA 7 mA 20 dBm 1.54 W 150 C 320 0C -65 to 150 0C
0
NOTES
2/
2/ 3/ 3/
2/ 4/ 5/ 6/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of 700C, the median life is 1.0E+6 hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
6/
TABLE II DC PROBE TEST (TA = 25 qC r 5 qC) SYMBOL
Idss (Q1A) Gm (Q1A) Vp (Q1) BVGS (Q1A) BVGD (Q1A,Q1B)
PARAMETER
Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain
MINIMUM
15 33 -1.5 -30 -30
MAXIMUM
94 106 -0.5 -8 -10
UNIT
mA mS V V V
Q1A and Q1B are 150um Input FETs
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
TGA4036
TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
PARAMETER
Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1dB Gain compression, P1dB Saturated Output Power, Psat Output TOI @ Pin/tone = -10dBm Temperature Coefficient
TYPICAL
19 - 38 5.0 160 -0.6 20 11 8 21 22 30 0.038
UNITS
GHz V mA V dB dB dB dBm dBm dBm dB/0C
TABLE IV THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 5 V Id = 160 mA Pdiss = 0.80 W TCH O ( C) 112 RTJC (qC/W) 51.9 TM (HRS) 3.4E+7
JC Thermal Resistance (channel to Case)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
Preliminary Measured Data
24 22 20 18 16 Gain (dB) 14 12 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 34 36 38 40
Bias Conditions: Vd = 5 V, Idq = 160 mA
TGA4036
42
44
Frequency (GHz)
24 22 20 Gain Over Temperature (dB) 18 16 14 12 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 34 Frequency (GHz) 36 38 40 42 44
-40C -20C 0C 20C 40C 60C 80C
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
TGA4036
Preliminary Measured Data
Bias Conditions: Vd = 5 V, Idq = 160 mA
0 -2 -4 Input Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) 0 -2 -4 Output Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
Preliminary Measured Data
Bias Conditions: Vd = 5 V, Idq = 160 mA
TGA4036
25 24 23 22 Power (dBm) 21 20 19 18 17 16 15 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz)
Psat
P1dB
`
24 22 20 Power (dBm) & Gain (dB) 18 16 14
260
@ 29 GHz Gain
250 240 230 Id (mA)
6
Pout Id
220 210 200 190 180 170 160
12 10 8 6 4 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pin (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
TGA4036
Preliminary Measured Data
40 Output TOI @ Pin/tone = -10dBm (dBm) 35 30 25 20 15 10 5 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 Frequency (GHz)
Bias Conditions: Vd = 5 V, Idq = 160 mA
60
50
40 IMD3 (dBc)
30
20
19GHz 25GHz 30GHz 36Ghz
10
0 4 5 6 7 8 9 10 11 12 13 14 15 16 Ouput Power/Tone (dBm)
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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December 9, 2004
TGA4036
Mechanical Drawing
0.085 (0.003)
0.593 (0.023)
1.328 (0.052)
0.750 (0.030)
2
0.445 (0.018)
3
0.665 (0.026)
1
4
0.389 (0.015)
0.085 (0.003) 0
6
5
0
0.299 (0.011)
1.065 (0.042)
1.603 1.688 (0.063) (0.066)
Units: Millimeters (inches) Thickness: 0.100 (0.004) (Reference Only) Cip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF Ground is backside of MMIC Bond pad #1: Bond pad #2, #3: Bond pad #4: Bond pad #5, #6: (RF In) (Vd) (RF Out) (Vg) 0.080 x 0.150 0.080 x 0.080 0.080 x 0.150 0.080 x 0.080 (0.003 x 0.006) (0.003 x 0.003) (0.003 x 0.006) (0.003 x 0.003)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
TGA4036
Recommended Chip Assembly Diagram
Vd = 5V
RF IN
RF OUT
Ribbon
Ribbon
Vg~-0.6V
Adjust Vg to get Id = 160mA
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 9, 2004
TGA4036 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
0
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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