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| 2SC4422 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Outline Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 400 150 -55 to +150 Unit V V V mA mW C C 2SC4422 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is "CR". I EBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 4.5 7.0 -- Typ -- -- -- -- -- 1.2 6.0 9.0 1.6 Max -- 1 1 1 250 1.6 -- -- 3.0 pF GHz dB dB Unit V A A A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 10 V, RBE = VEB = 1 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC4422 3 2SC4422 4 2SC4422 S Parameters (Emitter Common) Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50 5 2SC4422 6 2SC4422 S Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.747 0.534 0.394 0.310 0.258 0.216 0.193 0.167 0.157 0.136 ANG. -42.0 -70.3 -91.0 -105.3 -117.0 -126.9 -139.0 -149.6 -162.3 -171.9 S21 MAG. 12.471 8.958 6.624 5.194 4.280 3.636 3.170 2.824 2.543 2.326 ANG. 143.1 119.9 106.1 96.8 89.7 84.0 79.0 74.5 70.2 66.6 S12 MAG. 0.044 0.071 0.090 0.108 0.126 0.145 0.165 0.185 0.206 0.227 ANG. 69.5 62.3 61.2 62.5 64.1 65.1 65.9 66.5 66.9 67.0 S22 MAG. 0.840 0.640 0.522 0.456 0.417 0.391 0.376 0.368 0.363 0.362 ANG. -24.6 -36.3 -40.4 -42.4 -43.7 -45.4 -47.5 -50.0 -53.1 -56.3 Test Condition VCE = 5 V, IC = 20 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.333 0.192 0.135 0.107 0.088 0.078 0.069 0.060 0.063 0.051 ANG. -71.6 -98.5 -116.1 -130.9 -145.2 -155.4 -170.6 176.2 162.6 147.4 S21 MAG. 21.905 12.026 8.123 6.151 4.967 4.174 3.616 3.201 2.876 2.624 ANG. 117.7 100.7 92.4 86.7 82.3 78.2 74.7 71.1 67.9 65.0 S12 MAG. 0.031 0.054 0.079 0.104 0.129 0.153 0.178 0.203 0.227 0.251 ANG. 71.9 74.6 75.8 76.2 75.5 74.8 73.8 72.8 71.7 70.5 S22 MAG. 0.547 0.378 0.322 0.297 0.285 0.275 0.271 0.268 0.268 0.271 ANG. -37.3 -37.6 -35.5 -35.7 -36.6 -38.8 -42.0 -45.3 -49.3 -53.5 7 2SC4422 Y Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 1.949 3.994 6.433 8.206 9.403 10.179 10.910 11.193 11.543 11.387 IMAG. 3.563 5.961 7.295 7.536 7.501 7.259 7.124 6.776 6.593 6.328 Yfe (mS) REAL 147.837 120.026 89.506 62.937 43.528 29.375 19.483 11.803 6.205 2.208 IMAG. -43.785 -75.352 -98.131 -90.892 -87.146 -81.334 -75.831 -70.096 -65.171 -60.095 Yre (mS) REAL -0.001 0.005 0.006 0.017 0.043 0.058 0.098 0.127 0.192 0.249 IMAG. -0.544 -1.122 -1.711 -2.299 -2.877 -3.445 -4.063 -4.642 -5.302 -5.855 Yoe (mS) REAL 0.175 0.218 0.206 0.250 0.295 0.421 0.387 0.413 0.338 0.401 IMAG. 0.922 1.731 2.618 3.531 4.395 5.324 6.235 7.209 8.218 9.171 Test Condition VCE = 5 V, IC = 20 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 5.863 7.022 7.375 7.527 7.607 7.562 7.537 7.383 7.403 7.074 IMAG. 2.308 2.660 2.861 3.094 3.429 3.893 4.211 4.635 5.047 5.411 Yfe (mS) REAL 276.917 109.913 50.698 26.179 14.053 7.198 2.859 -0.221 -2.127 -3.292 IMAG. -268.988 -221.759 -167.756 -133.425 -110.501 -94.442 -82.874 -73.836 -67.183 -61.241 Yre (mS) REAL 0.000 0.005 0.006 0.024 0.025 0.056 0.079 0.124 0.180 0.246 IMAG. -0.522 -1.121 -1.713 -2.302 -2.885 -3.477 -4.077 -4.674 -5.312 -5.871 Yoe (mS) REAL 0.244 0.309 0.305 0.363 0.394 0.463 0.478 0.506 0.444 0.509 IMAG. 0.751 1.637 2.507 3.373 4.282 5.156 6.093 7.046 8.018 8.943 8 2SC4422 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 9 |
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