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| BFP540 NPN Silicon RF Transistor * For highest gain low noise amplifier at 1.8 GHz * Outstanding G ms = 21 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 45 - Line 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540 Maximum Ratings Parameter Marking ATs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS Package SOT343 Value 4.5 14 14 1 80 8 250 150 -65 ... 150 -65 ... 150 Value 290 Unit K/W mW C mA Unit V - Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 77C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-28-2004 BFP540 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V hFE 50 110 200 IEBO 10 A ICBO 100 nA ICES 10 A V(BR)CEO 4.5 5 V Symbol min. Values typ. max. Unit 2 Jan-28-2004 BFP540 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit 21 - 30 0.14 0.33 0.65 0.24 - GHz pF Ccb Cce Ceb F dB 0.9 1.3 21.5 1.4 dB G ms - G ma - 16 - dB |S21e|2 16 IP 3 18.5 14.5 24.5 - dB dBm P-1dB - 11 - 3 Jan-28-2004 BFP540 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 82.84 28.383 3.19 19.705 1.172 1.3 1.8063 6.76 1 0.81969 2.324 0 3 aA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 107.5 0.48731 5.5 0.02 5.4 0.31111 0.8051 0.4219 0 0.30232 0 0 0.73234 A A V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1 11.15 1 19.237 0.72983 4 0.46576 0.23794 234 0.3 0.75 1.11 300 fA aA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LEO = CBE = CCB = CCE = 0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134 nH nH nH nH pH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * Simulation of the package is not necessary for frequencies < 100MHz. For higher frequencies please add the wiring of the package equivalent circuit around the non-linear transistor. 4 Jan-28-2004 BFP540 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 300 10 3 mW K/W Ptot 200 RthJS 10 2 150 100 50 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 0 0 20 40 60 80 100 120 C 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = (tp) 10 1 Collector-base capacitance Ccb= (VCB) f = 1MHz 0.2 Ptotmax / PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ccb 0.1 0.05 -2 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 s 10 0 0 0.5 1 1.5 2 2.5 3 V 4 tp VCB 5 Jan-28-2004 BFP540 Transition frequency fT= (IC) f = 1GHz VCE = Parameter in V 35 GHz Power gain Gma, Gms = (IC) VCE = 2V f = Parameter in GHz 30 dB 1 25 20 fT 20 4 3 G 2 15 3 15 2 1.5 1 10 4 5 6 10 5 0.5 5 0 0 10 20 30 40 50 60 70 mA 90 0 0 10 20 30 40 50 60 70 mA 90 IC IC Power Gain Gma, Gms = (f), |S21| = f (f) Power gain Gma, Gms = (VCE) IC = 20mA f = Parameter in GHz 30 VCE = 2V, IC = 20mA 50 dB dB 40 35 20 1 IC 30 Gms G 2 15 3 25 20 Gma 10 4 5 6 15 10 5 0 |S21| 5 1 2 3 4 GHz 6 0 0 0.5 1 1.5 2 2.5 3 V 4 G VCE 6 Jan-28-2004 BFP540 Noise figure F = (IC ) VCE = 2V, ZS = ZSopt 4 dB Noise figure F = (I C) VCE = 2V, f = 1.8GHz 4 dB 3 3 F 2 F f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 10 20 30 40 50 60 mA 2.5 2.5 2 1.5 1.5 1 1 ZS = 50Ohm ZS = Zsopt 0.5 0.5 0 0 80 0 0 10 20 30 40 50 60 mA 80 IC IC Noise figure F = (f) VCE = 2V, ZS = ZSopt 3 Source impedance for min. noise figure vs. frequency VCE = 2V, IC = 5mA / 20mA +j50 dB +j25 +j100 +j10 2 F 2.4GHz 1.8GHz 0.9GHz 1.5 0 3GHz 10 25 4GHz 50 100 1 IC = 20mA IC = 5mA -j10 5GHz 6GHz 5mA 20mA -j100 -j50 0.5 -j25 0 0 1 2 3 4 GHz 6 f 7 Jan-28-2004 |
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