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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGU2003 SiGe MMIC amplifier
Preliminary specification 2002 May 17
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
FEATURES * Low current * Very high power gain * Low noise figure * Integrated temperature compensated biasing * Control pin for adjustment bias current * Supply and RF output pin combined. APPLICATIONS * RF front end * Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) * Low noise amplifiers * Satellite television tuners (SATV) * High frequency oscillators. DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
Marking code: A6
handbook, halfpage
BGU2003
PINNING PIN 1 2 3 4 GND RF in CTRL (bias current control) VS + RF out DESCRIPTION
3
4
CTRL
VS+RFout
BIAS CIRCUIT
2 Top view
1
MAM427
RFin
GND
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA SYMBOL VS IS MSG NF PARAMETER DC supply voltage DC supply current maximum stable gain noise figure CONDITIONS RF input AC coupled VVS-OUT = 2.5 V; ICTRL = 1 mA; RF input AC coupled VVS-OUT = 2.5 V; f = 1 800 MHz; Tamb = 25 C VVS-OUT = 2.5 V; f = 1 800 MHz; S = opt - 10 18 1.1 TYP. - - - MAX. 4.5 V mA dB dB UNIT
2002 May 17
2
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS VCTRL IS ICTRL Ptot Tstg Tj PARAMETER supply voltage voltage on control pin supply current (DC) control current total power dissipation storage temperature operating junction temperature Ts 100 C forced by DC voltage on RF input or ICTRL CONDITIONS RF input AC coupled - - - - - -65 - MIN. 2 30 3 135
BGU2003
MAX. 4.5 V V
UNIT
mA mA mW C C
+150 150
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 350 UNIT K/W
CHARACTERISTICS RF input AC coupled; Tj = 25 C; unless otherwise specified. SYMBOL IS MSG PARAMETER supply current maximum stable gain CONDITIONS VVS-OUT = 2.5 V; ICTRL = 0.4 mA VVS-OUT = 2.5 V; ICTRL = 1.0 mA VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz |s21|2 insertion power gain VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz s12 isolation VVS-OUT = 2.5 V; IVS-OUT = 0; f = 900 MHz VVS-OUT = 2.5 V; IVS-OUT = 0; f = 1800 MHz NF noise figure VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz; S = opt VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz; S = opt IP3(out) output intercept point; ZS = ZL 50 VVS-OUT = 2.3 V; IVS-OUT = 10 mA; f = 900 MHz VVS-OUT = 2.3 V; IVS-OUT = 10 mA; f = 1800 MHz MIN. 2.5 6 - - 18 13 - - - - - - TYP. 4.5 10 23 18 19 14 26 20 1.0 1.1 19 21 MAX. 6.5 15 - - - - - - 2 2 - - UNIT mA mA dB dB dB dB dB dB dB dB dBm dBm
2002 May 17
3
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
BGU2003
MGS537
handbook, halfpage
200
handbook, halfpage
100 pF
R1 VS L1 C
Ptot (mW) 150
RCTRL VCTRL 3 BGA2003 4
RF out 100
50 2 C 0 RF in 0
MGS536
1
50
100
150
Ts (C)
200
Fig.2 Typical application circuit.
Fig.3 Power derating.
MGS538
handbook, halfpage
2.5
I CTRL (mA)
handbook, halfpage
30
MGS539
I VS-OUT 2 (mA) 20
1.5
1 10 0.5
0 0 0.5 1 1.5 2 VCTRL (V)
0 0 0.5 1 1.5 2 I CTRL (mA) 2.5
VS-OUT = 2.5 V.
Fig.4
Control current as a function of the control voltage on pin 3; typical values.
Fig.5
Bias current as a function of the control current; typical values.
2002 May 17
4
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
Scattering parameters: VS = 2.5 V; IS = 10 mA; Tamb = 25 C s11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAGNITUDE (ratio) 0.837 0.783 0.713 0.645 0.581 0.519 0.474 0.433 0.397 0.369 0.342 0.320 0.301 0.286 0.273 0.262 0.252 0.241 0.229 0.221 0.216 0.215 0.229 0.237 0.240 0.243 0.243 0.238 0.233 0.224 ANGLE (deg) -10.6 -19.9 -28.4 -36.0 -42.0 -47.1 -50.8 -53.3 -55.2 -56.9 -58.4 -60.2 -62.1 -64.4 -66.7 -68.5 -7.08 -73.7 -77.0 -81.1 -85.5 -88.9 -91.6 -97.0 -99.3 -101.1 -102.9 -104.9 -106.8 -109.0 s21 MAGNITUDE (ratio) 19.216 17.589 16.321 15.046 13.701 12.709 11.602 10.631 9.791 8.951 8.314 7.730 7.275 6.912 6.493 6.078 5.783 5.475 5.289 5.094 4.911 4.779 4.588 4.446 4.325 4.145 4.105 4.038 3.924 3.795 ANGLE (deg) 163.9 151.7 142.4 134.5 127.7 121.6 116.8 112.6 108.8 106.0 103.6 101.1 99.4 97.1 94.8 93.5 91.8 90.9 89.9 88.4 87.2 85.6 84.3 83.8 82.3 81.9 81.6 80.2 78.5 76.7 s12 MAGNITUDE (ratio) 0.007 0.012 0.018 0.022 0.027 0.031 0.034 0.038 0.042 0.046 0.050 0.055 0.058 0.063 0.066 0.071 0.074 0.078 0.083 0.088 0.092 0.098 0.104 0.107 0.111 0.115 0.121 0.124 0.129 0.132 ANGLE (deg) 77.3 77.2 76.7 72.9 75.2 74.8 75.0 75.3 76.3 76.1 77.3 77.6 78.4 78.1 78.2 78.9 78.9 79.8 79.7 79.5 79.4 79.6 78.7 78.6 79.1 80.1 80.4 80.4 80.3 80.0
BGU2003
s22 MAGNITUDE (ratio) 0.976 0.920 0.861 0.805 0.759 0.718 0.689 0.664 0.644 0.627 0.610 0.599 0.591 0.583 0.578 0.572 0.564 0.553 0.543 0.530 0.518 0.512 0.515 0.515 0.523 0.532 0.537 0.538 0.532 0.519 ANGLE (deg) -7.1 -13.2 -17.1 -19.8 -21.9 -22.8 -23.4 -24.1 -24.4 -25.2 -25.6 -26.4 -27.2 -28.0 -28.6 -29.0 -29.6 -30.0 -30.7 -31.9 -33.6 -35.6 -38.2 -40.7 -42.3 -43.0 -43.3 -43.0 -43.2 -43.1
Noise parameters: VS = 2.5 V; IS = 10 mA; Tamb = 25 C gamma opt. f (MHz) 900 1800 2500 NFmin (dB) 1.0 1.1 1.3 MAGNITUDE (ratio) 0.19 0.08 0.07 ANGLE (deg) 14 60 90 Rn / 50 0.16 0.14 0.14
2002 May 17
5
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
PACKAGE OUTLINE
BGU2003
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
2002 May 17
6
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BGU2003
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 May 17
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
SCA73
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/04/pp8
Date of release: 2002
May 17
Document order number:
9397 750 09849

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