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| BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. PACKAGE STYLE .500 6L FLG C A 2 D 1 2x O N FU LL R FEATURES: * 28 V operation * PG = 1.0 dB at 175 W/108 MHz * OmnigoldTM Metalization System * Diffused Ballast Resistors D IM B G 3 .725/18,42 F 4 E K H M IN IM U M inches / m m M L J I M AXIM U M inches / m m MAXIMUM RATINGS IC VCESM VCEO VEBO PDISS TJ TSTG JC 17.5 A 65 V 33 V 4.0 V 220 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.80 C/W A B C D E F G H I J K L M N .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 1 = COLLECTOR 2&4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE VCEsat Cc PG C IC = 50 mA TC = 25C NONETEST CONDITIONS IC = 200 mA IE = 20 mA VCE = 33 V VCE = 25 V IC = 20 A VCB = 25 V VCC = 28 V POUT = 175 W IC = 8.5 A IC = 4.0 A f = 1.0 MHz f = 108 MHz MINIMUM TYPICAL MAXIMUM 65 33 4.0 25 15 1.6 275 10 65 100 UNITS V V V mA --V pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1 |
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