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BY268.BY269
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D Glass passivated junction D Hermetically sealed package
Applications
High voltage fast rectifier
94 9539
Absolute Maximum Ratings
Tj = 25_C Parameter Peak reverse voltage, non repetitive g Reverse voltage g Peak forward surge current Average forward current Junction and storage temperature range tp=10ms, half sinewave Test Conditions Type BY268 BY269 BY268 BY269 Symbol VRSM VRSM VR VR IFSM IFAV Tj=Tstg Value 1600 1800 1400 1600 20 0.8 -65...+175 Unit V V V V A A C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board with spacing 25mm Symbol RthJA Value 110 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Test Conditions Type BY268 BY269 BY268 BY269 IF=0.4A VR=1400V VR=1600V VR=1400V, Tj=100C VR=1600V, Tj=100C Reverse recovery time IF=0.5A, IR=1A, iR=0.25A Symbol VF IR IR IR IR trr Min Typ 1 1 Max 1.25 2 2 15 15 400 Unit V
mA mA mA mA
ns
Document Number 86005 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (3)
BY268.BY269
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 IF - Forward Current ( A ) 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30
94 9092
100
10
Tj = 175C
1 Tj = 25C 0.1
l
0.01 0 1 2 3 4 VF - Forward Voltage ( V )
94 9090
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
1000
Figure 3. Typ. Forward Current vs. Forward Voltage
12 CD - Diode Capacitance ( pF )
I R - Reverse Current ( mA )
Scattering Limit 100
10 8 6 4 2 0 f = 470 KHz Tj = 25C 0.1 1 10 100
10
1 VR = VR RM 0 40 80 120 160 200
0.1
94 9091
Tj - Junction Temperature ( C )
94 9093
VR - Reverse Voltage ( V )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
94 9538
3.6 max.
technical drawings according to DIN specifications
0.82 max.
26 min.
4.2 max.
26 min.
www.vishay.de * FaxBack +1-408-970-5600 2 (3)
Document Number 86005 Rev. 2, 24-Jun-98
BY268.BY269
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86005 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (3)

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