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| (R) BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV541V-200 BYV54V-200 DESCRIPTION Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current = 0.5 Surge non repetitive forward current Storage and junction temperature range Tc=90C tp=10ms sinusoidal Parameter Per diode Per diode Per diode Value 100 50 1000 - 40 to + 150 - 40 to + 150 Unit A A A C C Symbol VRRM Parameter Repetitive peak reverse voltage BYV54V / BYV541V 200 Unit V ISOTOP is a trademark of STMicroelectronics. August 1998 - Ed : 2D 1/5 BYV54V / BYV541V THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Per diode Total Value 1.2 0.85 0.1 Unit C/W Rth (c) Coupling C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C IF = 50 A IF = 100 A IF = 100 A Test Conditions VR = VRRM Min. Typ. Max. 50 5 0.85 1.00 1.15 Unit A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.003 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 40 Unit ns dIF/dt = -50A/s 60 tr = 5 ns 10 ns VFP Tj = 25C tr = 5 ns 1.5 V 2/5 BYV54V / BYV541V Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 45 40 35 30 25 20 15 10 5 1000 800 600 T IM(A) T P=30W IM =tp/T tp P=15W P=45W 400 200 P=60W I F(av)(A) =tp/T tp 0 0 5 10 15 20 25 30 35 40 45 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 = 0 .1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 10 IFM(A) Tj=125 oC 0.5 T 0.2 Single pulse 100 500 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/ T tp 1 .0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. IM(A) Fig.6 : Average current versus temperature. (duty cycle : 0.5) IF(av) (A) ambient 400 60 50 Rth(j-a)=Rth(j-c) 300 40 Tc=25 oC Tc=50 o C 200 30 =0.5 20 10 =tp/T T 100 IM t Tc= 90 o C =0.5 t(s) 0.01 0.1 1 0 0 tp Tamb(o C) 0 0.001 20 40 60 80 100 120 140 160 3/5 BYV54V / BYV541V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). Fig.8 : Recovery charges versus dIF/dt. 42 0 40 0 38 0 36 0 34 0 32 0 30 0 28 0 26 0 C(pF) F=1Mhz Tj=25 oC VR(V) 10 1 00 20 0 24 0 1 120 11 0 90%CONFIDENCE 100 IF=IF(av) Tj=100 OC 90 80 70 60 Tj=25 O C 50 40 30 20 10 dIF/dt(A/us) 0 1 10 QRR(nC) 1 00 Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] 4.0 3.6 90%CONFIDENCE IF=IF(av) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 20 1 IRM(A) 1.50 Tj=100 OC 1.25 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 dIF/dt(A/us) 10 1 00 Tj( o C) 0.00 0 25 50 75 100 125 150 4/5 BYV54V / BYV541V PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Marking : Type number Cooling method : C Weight : 27 g Millimeters Inches Min. Typ. Max. Min. Typ. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 0.976 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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