|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet July 1999 File Number 2407.4 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs [ /Title (RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E) /Subject 12A, 0V, .135 hm, hanel, ogic evel, ower OSETs) /Autho () /Keyords Interil orpoation, hanel, ogic evel, ower OSThese N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09861. Features * 12A, 60V * rDS(ON) = 0.135 * Electrostatic Discharge Protected * UIS Rating Curve (Single Pulse) * Design Optimized for 5V Gate Drive * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFD12N06RLE RFD12N06RLESM RFP12N06RLE PACKAGE TO-251AA TO-252AA TO-220AB BRAND 12N6LE 12N6LE 12N06RLE G S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A. Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-12 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 60 60 12 26 -5 to10 40 0.32 Refer to UIS SOA Curve 2 -55 to 150 300 260 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2) Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg UNITS V V A A V W W/oC kV oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC MIN 60 1 VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 48V, ID = 12A, RL = 4, IG(REF) = 0.25mA (Figures 17, 18) TO-251AA and TO-252AA TO-220AB TYP 12 20 24 12 MAX 2 1 25 10 0.135 0.160 60 60 40 20 1.5 3.125 100 62 UNITS V V A A A ns ns ns ns ns ns nC nC nC oC/W oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IGSS rDS(ON) VGS = -5 to 10V ID = 12A, VGS = 5V (Figures 7, 8) ID = 12A, VGS = 4V VDD = 30V, ID 6A, RL = 5, RGS = 6.25, VGS = 5V, (Figures 15, 16) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(TOT) Qg(5) Qg(TH) RJC RJA Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300ms, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 12A ISD = 12A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.2 200 UNITS V ns 6-13 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) 10 Unless Otherwise Specified 15 0.6 0.4 5 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT, (A) ID MAX CONTINUOUS 10 DC OPERATION OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 IAS, AVALANCHE CURRENT (A) If R = 0 tav = (L)(Ias) / (1.3 RATED BVDSS - VDD) If R 0 tav = (L/R) In ((Ias x R) / (1.3 RATED BVDSS - VDD) + 1) Idm 10 STARTING TJ = 25oC STARTING TJ = 150oC 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY IDS(ON), DRAIN TO SOURCE CURRENT (A) 30 30 VGS = 10V ID, DRAIN CURRENT (A) VGS = 5V VGS = 4V 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 10 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5 % MAX VDS = 15V -55oC 25oC 150oC 20 10 VGS = 2V 0 0 1.5 3 4.5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 7.5 0 0 1.5 3 4.5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7.5 FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS 6-14 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Typical Performance Curves 1.4 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VDS = 15V, ID = 12A 1.3 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.2 1.1 1.0 0.9 0.8 0.7 0.6 4.0 4.5 5.0 5.5 6.0 6.5 VGS, GATE TO SOURCE VOLTAGE (V) 7.0 Unless Otherwise Specified (Continued) 2.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 ID = 12A, VGS = 5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 1.0 0.5 0 -50 0 50 100 150 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs GATE TO SOURCE VOLTAGE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 ID = 250A 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1500 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 60 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50 BVDSS VDD = 0.25BVDSS GATE SOURCE VOLTAGE RL = 5.0 IG(REF) = 0.25mA VGS = 5V DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 1250 C, CAPACITANCE (pF) 1000 750 CISS 500 250 0 0 5 10 15 COSS CRSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 45 30 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 6-15 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON td(ON) RL VDS VGS VGS + tOFF td(OFF) tr tf 90% VDS 90% 0V RGS DUT 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 15. SWITCHING TIME TEST CIRCUIT FIGURE 16. RESISTIVE SWITCHING WAVEFORMS VDS RL VDD VDS VGS = 10V VGS + Qg(TOT) Qg(5) VDD VGS VGS = 1V 0 Qg(TH) Ig(REF) 0 VGS = 5V DUT Ig(REF) FIGURE 17. GATE CHARGE TEST CIRCUIT FIGURE 18. GATE CHARGE WAVEFORMS 6-16 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-17 |
Price & Availability of RFP12N06RLE |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |