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| SPW35N60C3 CoolMOSTM Power Transistor Features * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv /dt rated * Ultra low effective capacitances * Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.1 34.6 V A P-TO247 Type SPW35N60C3 Package P-TO247 Ordering Code Q67040-S4673 Marking 35N60C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature P tot T j, T stg I D=34.6 A, V DS=480 V, T j=125 C static AC (f >1 Hz) T C=25 C T C=25 C I D=17.3 A, V DD=50 V I D=34.6 A, V DD=50 V Value 34.6 21.9 103.8 1500 1.5 34.6 50 20 30 313 -55 ... 150 W C A V/ns V mJ Unit A Rev. 1.0 page 1 2004-05-10 SPW35N60C3 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.4 62 K/W Values typ. max. Unit T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V (BR)DS V GS(th) V GS=0 V, I D=34.6 A V DS=V GS, I D=1.9 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=21.9 A, T j=25 C V GS=10 V, I D=21.9 A, T j=150 C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=21.9 A 600 2.1 700 3 3.9 V Zero gate voltage drain current I DSS - 0.1 1 A - 0.081 100 100 0.1 nA - 0.2 0.6 36 S Rev. 1.0 page 2 2004-05-10 SPW35N60C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance C iss C oss C rss V GS=0 V, V DS=25 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 324 10 5 70 10 ns 4500 1500 100 180 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related3) Effective output capacitance, time related4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 1) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=480 V, I D=34.6 A, V GS=0 to 10 V - 18 70 150 5.3 200 - nC V Pulse width limited by maximum temperature T j,max only Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) Rev. 1.0 page 3 2004-05-10 SPW35N60C3 Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current IS I S,pulse V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/s T C=25 C V GS=0 V, I F=34.6 A, T j=25 C 0.95 600 21 90 34.6 103.8 1.2 V ns C A A Values typ. max. Unit Typical Transient Thermal Characteristics Symbol Value typ. R th1 R th2 R th3 R th4 R th5 0.00441 0.00608 0.0341 0.0602 0.0884 K/W C th1 C th2 C th3 C th4 C th5 C th6 Unit Symbol Value typ. 0.00037 0.00223 0.00315 0.0179 0.098 4.45) Ws/K Unit C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. 5) Rev. 1.0 page 4 2004-05-10 SPW35N60C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 400 103 limited by on-state resistance 300 102 10 s 1 s P tot [W] 100 s 200 I D [A] 101 DC 1 ms 10 ms 100 100 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 C parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 100 20 V 7V 6.5 V 0.5 80 6V 10-1 0.2 Z thJC [K/W] 60 I D [A] 0.1 5.5 V 0.05 -2 40 10 0.02 0.01 5V single pulse 20 4.5 V 4V 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 1.0 page 5 2004-05-10 SPW35N60C3 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 60 20 V 7V 6.5 V 6V 5.5 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 0.8 0.7 0.6 5.5 V 50 4V 4.5 V 5V 40 0.5 5V 30 R DS(on) [] I D [A] 0.4 0.3 6V 20 4.5 V 0.2 10 4V 20 V 0.1 0 0 0 5 10 15 20 0 10 20 30 40 50 60 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=21.9 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 100 25 C 0.25 80 0.2 R DS(on) [] 60 0.15 98 % I D [A] 150 C 40 typ 0.1 0.05 20 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 1.0 page 6 2004-05-10 SPW35N60C3 9 Typ. gate charge V GS=f(Q gate); I D=34.6 A pulsed parameter: V DD 12 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 10 25 C 25 C, 98% 150 C, 98% 102 8 120 V 480 V 150 C V GS [V] 6 I F [A] 0 50 100 150 200 101 4 100 2 0 10-1 0 0.5 1 1.5 2 2.5 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 40 12 Avalanche energy E AS=f(T j); I D=17.3 A; V DD=50 V 1600 30 1200 20 25 C E AS [mJ] 125 C -3 -2 -1 0 1 2 3 I AV [A] 800 10 400 0 10 10 10 10 10 10 10 0 20 60 100 140 180 t AR [s] T j [C] Rev. 1.0 page 7 2004-05-10 SPW35N60C3 13 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 105 660 104 Ciss V BR(DSS) [V] C [pF] 620 103 Coss 580 102 Crss 540 -60 -20 20 60 100 140 180 101 0 100 200 300 400 500 T j [C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 30 25 20 E oss [J] 15 10 5 0 0 100 200 300 400 500 600 V DS [V] Rev. 1.0 page 8 2004-05-10 SPW35N60C3 Definition of diode switching characteristics P-TO247: Outline Dimensions in mm Rev. 1.0 page 9 2004-05-10 SPW35N60C3 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2004-05-10 |
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