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STPS30H100CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE RATED DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 155C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 30 15 30 250 1 3 - 65 to + 175 175 10000 Unit V A A A A A C C V/s
A2 K1 A1
2 x 15 A 100 V 175 C 0.67 V
A1 K A2
TO-247
tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square
*:
dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj
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July 1999 - Ed: 3D
STPS30H100CW
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.9 0.1 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2%
Min.
Typ.
Max. 5
Unit A mA V
VR = VRRM 2 IF = 15 A IF = 15 A IF = 30 A IF = 30 A 0.74 0.64
6 0.80 0.67 0.93 0.80
To evaluate the maximum conduction losses use the following equation : P = 0.54 x IF(AV) + 0.0086 x IF2(RMS)
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 14 12 10
=1 = 0.05 = 0.1 = 0.2 = 0.5
Fig. 2: Average forward current versus ambient temperature (=0.5, per diode).
IF(av)(A) 18 16 14 12 10 8 6 4 2 0
Rth(j-a)=Rth(j-c)
8 6 4 2 0 0 2 4 6 IF(av) (A) 8 10 12 14
=tp/T
T
Rth(j-a)=15C/W
T
tp
=tp/T
tp
Tamb(C) 50 75 100 125 150 175
16
18
20
0
25
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STPS30H100CW
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration.
IM(A) 240 220 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3
Zth(j-c)/Rth(j-c) 1.0 0.8
Tc=25C Tc=75C
0.6 0.4 0.2
= 0.5
= 0.2 = 0.1
T
Tc=150C
t
=0.5
t(s) 1E-2 1E-1 1E+0
0.0 1E-4
Single pulse
tp(s) 1E-3 1E-2
=tp/T
tp
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF) 1000
IR(mA) 2E+0 1E+0 1E-1 1E-2 1E-3
Tj=25C Tj=125C
F=1MHz Tj=25C
500
200
VR(V)
1E-4
VR(V)
60 70 80 90 100
1E-5
0
10
20
30
40
50
100
1
2
5
10
20
50
100
Fig. 7: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 200 100
Tj=125C Tj=25C
10
VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
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STPS30H100CW
PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF.
V
Millimeters Min. Typ. Max. Min.
Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143
V
Dia.
H
A
L5
L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3
F1
L1 D
A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139
Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Ordering type STPS30H100CW Marking STPS30H100CW Package TO-247 Weight 4.36g Base qty 30 Delivery mode Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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