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| TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK19H50C Switching Regulator Applications Low drain-source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 25 (typ.) : |Yfs| = 14 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 19 76 150 968 19 15 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA 2-16K1A Weight: 3.8 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C / W C / W 1 2 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.56 mH, RG = 25 , IAR = 19 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2005-08-23 TK19H50C Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 50 tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 19 A 10 V 0V ID = 9.5A RL = 21 VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9.5 A VDS = 10 V, ID = 9.5 A Min -- 30 -- 500 2.0 -- 4.0 -- -- -- -- Typ. -- -- -- -- -- 0.25 14 3100 20 270 70 Max 10 -- 100 -- 4.0 0.30 -- -- -- -- -- pF Unit A V A V V S VGS Turn on time Switching time Fall time -- 130 -- ns VDD 200 V - Duty < 1%, tw = 10 s = -- 70 -- Turn off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- -- -- -- 280 62 40 22 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 19 A, VGS = 0 V IDR = 19 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 1200 18 Max 19 76 -1.7 -- -- Unit A A V ns C Marking TOSHIBA TK19H50C Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2005-08-23 TK19H50C ID - VDS 10 Common source Tc = 25C Pulse Test 10 20 6 5.5 16 8 5.25 6 5 4 10 8 ID - VDS 6 Common source Tc = 25C Pulse Test 8 (A) ID ID (A) 5.75 12 5.5 8 5 4 4.5 VGS = 4 V Drain current 2 4.5 VGS = 4V 0 0 1 2 3 4 5 Drain current 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 80 20 Common source VDS = 10 V Pulse Test VDS - VGS Common source Tc = 25C Pulse Test 16 60 ID (A) VDS (V) Drain-source voltage Tc = -55C 12 Drain current 40 25 100 20 8 ID = 19 A 4 9.5 4 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 1.0 Common source VDS = 10 V Pulse Test RDS (ON) - ID Forward transfer admittance Tc = -55C 10 100 25 Drain-source ON resistance RDS (ON) () Yfs (S) Common source Tc = 25C VGS = 10 V Pulse Test 0.1 1 10 100 1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2005-08-23 TK19H50C RDS (ON) - Tc 1.0 IDR - VDS 100 Common source Tc = 25C Pulse Test RDS (ON) () 0.8 Drain reverse current IDR (A) 9.5 10 ID = 19A 4 Common source VGS = 10 V Pulse Test Drain-source ON resistance 0.6 0.4 1 10 5 3 0.2 0 -80 1 0.4 0.6 -40 0 40 80 120 160 0.1 VGS = 0 V 0.8 1.0 1.2 0 0.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Ciss 5 Vth - Tc Common source VDS = 10 V ID = 1mA Pulse Test (V) 4 1000 (pF) Coss Vth Capacitance 100 Crss 10 Gate threshold voltage C 3 2 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 100 1 1 0.1 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 500 Dynamic input / output characteristics 20 VDS 400 200V 300 VDD = 100V 200 VGS 100 Common source ID = 19 A Ta = 25C Pulse Test 0 0 20 40 60 80 0 100 4 400V 8 12 16 (W) PD 150 VDS (V) Drain power dissipation 100 50 0 0 40 80 120 160 200 Case temperature Tc (C) Drain-source voltage Total gate charge Qg (nC) 4 2005-08-23 Gate-source voltage VGS (V) TK19H50C rth - tw 10 Normalized transient thermal impedance 1 Duty=0.5 0.2 rth (t)/Rth (ch-c) 0.1 0.1 0.05 0.02 PDM 0.01 SINGLE PULSE t T Duty = t/T Rth (ch-c) = 0.833C/W 0.01 0.001 10 100 1m 10m 100m 1 10 Pulse width tw (s) SAFE OPERATING AREA 1000 1000 EAS - Tch (mJ) 100 s * 800 (A) ID max (continuous) 10 DC OPEATION Tc = 25C 1 ms * EAS Avalanche energy 100 ID max (pulse) * 600 ID Drain current 400 1 200 0.1 Single pulse Ta=25 Curves must be derated linearly with increase in temperature. VDSS max 0 25 50 75 100 125 150 Channel temperature (initial) Tch 100 1000 (C) 0.01 1 10 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD Test circuit Wave form AS = 1 B VDSS L I2 B 2 - VDD VDSS VDS RG = 25 VDD = 90 V, L = 4.56 mH 5 2005-08-23 TK19H50C 6 2005-08-23 |
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