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| Ordering number:EN4895 FX855 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features * Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting. * The FX855 is formed with 2 chips, one being equivalent to the 2SK1470 and the other the SB0509, placed in one package. Package Dimensions unit:mm 2119 [FX855] Electrical Connection 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view) 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain SANYO:XP6 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 90 95 500 10 -55 to +125 -55 to +125 V V mA A C C VDSS VGSS ID IDP PD PD Tch Tstg PW10s, duty cycle1% Tc=25C Mounted on ceramic board (750mm2x0.8mm) 60 15 2 8 6 1.5 150 -55 to +150 V V A A W W C C Symbol Conditions Ratings Unit * Marking:855 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4 FX855 Continued from preceding page. Electrical Characteristics at Ta = 25C Parameter [MOSFET] D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=300A IF=500mA VR=45V VR=10V, f=1MHz Cycle IF=IR=100mA, See specified Test CIrcuit Mounted on ceramic board (750mm2x0.8mm) Symbol Conditions Ratings min 60 100 10 1.0 1.2 2.0 0.35 0.45 150 60 12 6 10 60 20 1.0 90 0.7 80 34 10 85 0.45 0.6 2.0 typ max Unit V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1mA, VGS=10V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=2A, VGS=0 V A A V S pF pF pF ns ns ns ns V V V A pF ns C/W Switching Time Test CIrcuit [MOSFET] Trr Test Circuit [SBD] No.4895-2/4 FX855 No.4895-3/4 FX855 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4895-4/4 |
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