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| MICROWAVE CORPORATION v03.0704 HMC465 Features Gain: 17 dB Output Voltage to 10Vpk-pk +24 dBm Saturated Output Power Supply Voltage: +8V @160 mA 50 Ohm Matched Input/Output 3.12 mm x 1.63 mm x 0.1 mm GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC465 wideband driver is ideal for: * OC192 LN/MZ Modulator Driver * Telecom Infrastructure * Test Instrumentation * Military & Space Functional Diagram General Description The HMC465 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 2.5 dB noise figure and +24 dBm of saturated output power while requiring only 160 mA from a +8V supply. Gain flatness is excellent at 0.25 dB as well as +/- 1 deg deviation from linear phase from DC - 10 GHz making the HMC465 ideal for OC192 fiber optic LN/MZ modulator driver amplifier as well as test equipment applications. The HMC465 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into MultiChip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Saturated Output Voltage Group Delay Variation Supply Current (Idd) (Vdd= 8V, Vgg1= -0.6V Typ.) 19.5 15 Min. Typ. DC - 6.0 18 0.5 0.015 3.0 18 18 22.5 24 33 10 3 160 19 0.025 5.0 15 Max. Min. Typ. 6.0 - 12.0 17 0.25 0.015 2.5 20 17 22 24 30 10 3 160 17 0.025 3.5 13 Max. Min. Typ. 12.0 - 20.0 16.5 0.5 0.02 3.0 16 17 20 22 26 8 3 160 0.03 4.5 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dBm Vpk-pk pSec mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical. 1 - 112 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) S21 17 - 25 GHz 20 18 16 1 AMPLIFIERS - CHIP 1 - 113 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C S11 S22 Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Low Frequency Gain & Return Loss 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0.00001 Noise Figure vs. Temperature 8 7 +25C +85C -55C RESPONSE (dB) S21 S11 S22 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C 17 - 25 GHz 30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 40 38 36 34 OIP3 (dBm) 32 30 28 26 24 22 20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz, Idd= 160mA Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 36 32 28 24 20 16 12 8 4 0 5.5 6 6.5 7 7.5 Gain P1dB Psat OIP3 8 8.5 Vdd SUPPLY VOLTAGE (Vdc) Group Delay 0 -10 -20 GROUP DELAY (pS) -30 -40 -50 -60 -70 -80 -90 -100 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Deviation from Linear Phase DEVIATION FROM LINEAR PHASE (deg) 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 1 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFin)(Vdd = +8.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 24 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +9.0 Vdc -2.0 to 0 Vdc (Vdd -8.0) Vdc to Vdd +23 dBm 175 C 2.17 W 41.5 C/W -65 to +150 C -55 to +85 C Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 161 160 159 1 AMPLIFIERS - CHIP 1 - 115 Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN This pad is DC coupled and matched to 50 Ohms from DC - 20.0 GHz 2 Vgg2 Gate Control 2 for amplifier. +1.5V should be applied to Vgg2 for nominal operation. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 ACG2 5 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 7 ACG4 8 Vgg1 Gate Control 2 for amplifier. Die Bottom GND Die bottom must be connected to RF/DC ground. 1 - 116 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz Assembly Diagram 1 AMPLIFIERS - CHIP Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 117 v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 1 - 118 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0704 MICROWAVE CORPORATION HMC465 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 1 AMPLIFIERS - CHIP 1 - 119 Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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