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| MegaMOSTM Power MOSFET IRFP 460 VDSS ID(cont) RDS(on) = 500 V = 20 A = 0.27 N-Channel Enhancement Mode, HDMOSTM Family Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 20 80 20 28 3.5 260 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features C C C l l l l l l l W Repetitive avalanche energy rated Fast switching times Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High Commutating dv/dt Rating Mounting torque 1.15/10 Nm/lb.in. 6 300 g C Applications Switching Power Supplies Motor controls Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 0.25 25 250 0.27 V V nA A A VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 12 A Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 92825D (5/98) (c) 2000 IXYS All rights reserved 1-4 IRFP 460 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 13 21 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 450 135 23 VGS = 10 V, VDS = 250 V, ID = 20 A RG = 4.3 , (External) 81 85 65 135 VGS = 10 V, VDS = 200 V, ID = 20 A 28 62 35 120 130 98 210 40 110 0.45 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 12 A, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Q rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 80 1.8 570 5.7 860 A A V ns C Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Repetitive; pulse width limited by TJM IF = 20 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 20 A, -di/dt = 100 A/s, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IRFP 460 50 TJ = 25OC VGS=10V 9V 8V 7V 40 30 TJ = 125OC VGS=10V 9V 8V 7V 6V ID - Amperes 30 20 5V ID - Amperes 6V 20 5V 10 10 0 0 4 8 12 16 20 0 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.8 VGS = 10V Figure 2. Output Characteristics at 125OC 6 VGS = 10V RDS(ON) - Normalized Tj=1250 C RDS(ON) - Normalized 2.4 2.0 1.6 1.2 0.8 0 10 20 30 40 50 5 ID = 24A 4 3 ID = 12A Tj=250 C 2 1 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to value at ID = 12A 25 20 Figure 4. RDS(on) normalized to value at ID = 12A 24 20 ID - Amperes ID - Amperes 15 10 5 16 12 TJ = 125oC 8 TJ = 25oC 4 0 -50 -25 0 25 50 75 100 125 150 0 0 2 4 6 8 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IRFP 460 12 10 VDS = 400V ID = 15A 5000 Ciss 2500 VGS - Volts 8 6 4 2 0 0 50 100 150 200 Capacitance - pF f = 1MHz Coss 1000 500 Crss 250 100 0 5 10 15 20 25 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 50 100 Figure 8. Capacitance Curves 40 0.1ms ID - Amperes 30 TJ = 125OC ID - Amperes 10 1ms 10ms 1 TC = 25OC 100ms DC 20 TJ = 25OC 10 0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 10 100 500 VSD - Volts VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area 1 R(th)JC - K/W Single pulse 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
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